20 Apr. 2016
The Japan Institute of Electronics Packaging (JIEP), Outstanding Technical Paper Award
International society
Woon Choi;Takahiro Ishimoto;Hajime Tomokage

微細シリコンTSVの走査型レーザビーム誘起電流評価
Tadashi Suetsugu
第28回マイクロエレクトロニクスシンポジウム論文集, 06 Sep. 2018, :289 - 292

3次元実装ためのシリコンTSV故障評価
Woon Choi; Tadashi Suetsugu
MES2017, 29 Aug. 2017, 27:307 - 310

SAPとダマシン工程による微細CPW伝送線路の高周波伝送特性評価
Takashi Ogawa; Yonggun Han; Woon Choi; Takayuki Suzuki
MES2017, 29 Aug. 2017, 27:339 - 342

Evaluation of electroplating copper filling of a though silicon via using a scanning-laser-beam-induced current system
Woon Choi; Takashiro Ishimoto; Hajime Tomokage
Transactions of the Japan Institute of Electronics Packaging, Dec. 2015, 8(1):103 - 110, Refereed

Evaluation of through-silicon-via using scanning laser beam induced current (SLBIC) system
Woon Choi; Takashiro Ishimoto; Hajime tomokage
Proc. of ICEP-IAAC2015, Apr. 2015, :180 - 184

Evaluation of the reliability of embedded device substrate
Yoshihisa Katoh; Younggun Han; Osamu Horiuchi; Hoajime Tomokage; Shintaro So; Woon Choi
Surface mouning technology, Apr. 2015, :34 - 40

部品内臓基板の信頼性
加藤義尚; 宗新太郎; 韓榮建; 堀内整; 崔雲; 友景肇
エレトロにクス実装学会誌, Aug. 2014, 17(5):370 - 375

Indetification of through silicon via (TSV) failure point using time domain reflectometry (TDR) method
Keiji Matsumoto; Hiroaki Ostuka; Osamu Horiuchi; Younggan Han; Woon Choi; Hajime Tookage
Transactions of The Japan Institute of Electronics Packaging, Dec. 2013, 6(1):57 - 62, Refereed

曲げ試験法を用いた基板内埋め込み素子の信頼性試験
宗慎太郎; 韓榮建; 堀内整; 崔雲; 加藤義尚; 友景肇
Proc. of MES2013, Sep. 2013, :171 - 174

Scanning laser induced current measurements on silicon wafer with through silicon via structrue
S. Takasu; R. Zaizen; W. Choi; H. Tomokage; H. Sueyoshi
International J. of Nanoparticles, Aug. 2013, 6:73 - 80

Identification of Through Silicon Via (TSV) Failure Point using Time Domain Reflectometry (TDR) Method
Keiji Matsumoto; Hiroaki Otsuka; Osamu Horiuchi; Younggun Han; Woon Choi; Hajime Tomokage
Proc. Int. Conf. on Electronics Packaging 2013 (ICEP2013), Apr. 2013

Maskless Eletroplating of Copper on Diamond-like Carbon Films Modified by Scanning Probe Method
Shigehiro Hayashi; Woon Choi; Hajime Tomokage
Proc. Int. Conf. on Electronics Packaging 2013 (ICEP2013), Apr. 2013

Electron and laser beam-induced current measurements of diamond-like carbon films modified by scanning probe method
Shigehiro Hyashi; Younggun Han; Woon Choi; Hajime Tomokage
J. of Applied Physics, Mar. 2013, 113(096101)

Impacts of uniaxial mechanical stress on high frequency performance of MOSEFTs
Younggun Han; Masaaki Koganimaru; Toru Ikeda; Noriyuki Miyazaki; Woon Choi; Hajeme Tomokage
ESTC2010, Sep. 2010, :156 - 160

Fabrication of system with probe (SwP) for high-frequency measurement applications
K.Matsumoto; W.Choi; H.Tomokage
Microwave and Optical Tech. Lett., Sep. 2010, 52(9)

Interconnection properties of low-k TEG wafers under stress applied by four-point bending method
M. Masumoto; Y. Han; O. Horiuchi; G. Kawashiri; W. Choi; H. Tomokage
Proc. Int. Conf. on Electronics Packaging 2010 (ICEP2010), Apr. 2010, :535 - 540

Influence of uniaxial mechanical stress on the high frequency performance of metal-oxide-semiconductor field effect transistors on (100) Si wafer
Younggun Han; Masaaki Koganimaru; Toru Ikeda; Noriyuki Miyazaki; Woon Choi; Hajeme Tomokage
APL, Jan. 2010, 96(213515)

Effects of uni-axial mechanical stress on scattering parameters of metal oxide semiconductor field effect transistors
Toru Ikeda; Noriyuki Miyazaki; Yamaguchi Kiyotaka; Woon Choi; Hajime Tomokage
Proc. Int. Conf. on Electronics Packaging 2009 (ICEP2009),, Apr. 2009, :440 - 445

Evaluation of low-k damage during assembly process by using TEG wafer
Matsumi Masumoto; Osamu Horiuchi; Takeshi Yamada; Jun Morishita; Woon Choi; Hajime Tomokage
Proc. Int. Conf. on Electronics Packaging 2009 (ICEP2009), Apr. 2009, :574 - 578

Band pass filter embedded SwP(System with Probe) for high frequency application
Keiji Matsumoto; Ryota Saito; Woon Choi; Hajime Tomokage
Proc. Int. Conf. on Electronics Packaging 2009 (ICEP2009), Apr. 2009, :712 - 717

Defects analysis of high electron mobility transistor using scanning electron and laser beams induced current (SELBIC) system
Haruki Sueyoshi; Shin-ichi Takasu; Woon Choi; Hajime Tomokage
Proc. Int. Conf. on Electronics Packaging 2008 (ICEP2008),, Jun. 2008, :473 - 477, Refereed

Thermal resistance analysis on semiconductor packages using two mesh models
Haruki Sueyoshi; Woon Choi; Hajime Tomokage
Proc. Int. Conf. on Electronics Packaging 2007 (ICEP2007),, Apr. 2007, Refereed

Dielectric constant analysis of low temperature co-fired ceramic substrates in GHz range
W.Choi; T.Kawamura; H.Tomokage
Proc. Int. Conf. on Electronics Packaging 2006 (ICEP2006), Apr. 2006, :168 - 173, Refereed

Thermal resistance analysis on semiconductor packages using two mesh models
H.Sueyoshi; I.Ohkubo; W.Choi; S.Yoshida; H.Tomokage
Proc. Int. Conf. on Electronics Packaging 2006 (ICEP2006), Apr. 2006, :202 - 208, Refereed

Evaluation of spiral inductors embedded in low temperature co-fired ceramic substrates
W.Choi; S.Ono; S.Yoshida; H.Tomokage
Proc. InterPACK2005, Jul. 2005, :73469 - 73474, Refereed

Evaluation of inductors and capacitors embedded in low temperature co-fired ceramic substrates
Hajime Tomokage; Woon Choi; Hirofumi Onaga; Shintaro Ono; Seiichiro Yoshida
Proc. Int. Conf. on Electronics Packaging (ICEP2005), Apr. 2005, :358 - 363, Refereed

Surface resistance and field emission current measurements on chemically vapor deposited polycrystalline diamond by scanning probe methods
Y.Iseri; M.Honda; Y-D.Kim; T.Ando; W.Choi; H.Tomokage
J. Phys.: Condens. Matter, Nov. 2004, 16:171 - 180, Refereed

Scanning probe field current measurements on diamond-like carbon films treated by reactive ion etching
D.Kawasaki; D.Tsuchimura; W.Choi; Y.Iseri; T.Ando; H.Tomokage
J. Phys.: Condens. Matter, Nov. 2004, Refereed

Surface conductivity and field emission characteristics of chemically vapor deposited polycrystalline diamond
Y.D. Kim; H. Jeon; W. Choi; C.H. Wang; T. Ando; S.Y Chang; H. Tomokage
Jpn. J. Appl. Phys., Nov. 2002, 41(part1,5A):3081 - 3085, Refereed

Field emission characteristics of plasma etched chemical vapor deposited diamond-like carbon films using scanning probe measurements
W. Choi; E.R. Hwang; N. Nomura; S. Itose; Y. Iseri; T. Ando; H. Tomokage
Solid-State Phenomena, Nov. 2001, 78-79:191 - 197, Refereed

Spitial variation of field emission current on nitrogen-doped diamond-like carbon surfaces by scanning probe method
W. Choi; Y.D. Kim; Y. Iseri; A. Adachi; H. Tomokage; T. Ando
Diamond Relat. Mater, Nov. 2001, 10:863 - 868, Refereed

Scanning probe field emission current measurements on polycrystalline diamond films
H. Wakimoto; H. Tomokage; Y. Kim; W. Choi; Y. Iseri; T. Ando
Solid-State Phenomena, Nov. 2001, 78-79:177 - 183, Refereed

Surface characterization of plasma etched DLC films by scanning tunneling microscopy and atomic force microscopy
E.R. Hwang; W. Choi; Y. Iseri; H. Tomokage
Solid-State Phenomena, Nov. 2001, 78-79:183 - 201, Refereed

Characterization of boron doped polycrystalline CVD diamond by ultra high vacuum scanning tunneling mocroscopy
Y.D. Kim; W. Choi; H. Wakimoto; S. Usami; H. Tomokage; T. Ando
Diamond Relat. Mater, Nov. 2000, 9:1096 - 1100, Refereed

Direct observation of electron emission site on boron-doped polycrystalline diamond thin films using an ultra-high-vacuum scanning tunneling microscope
YD Kim; W Choi; H Wakimoto; S Usami; H Tomokage; T Ando
APPLIED PHYSICS LETTERS, Nov. 1999, 75(20):3219 - 3221, Refereed

Charaterization of corrosion and generated phases of nitride layer for AISI 304 stainless steels using in ion nitriding
D.H. Shin; W. Choi; H.M. Inn; H.J. Kim; S.E. Nam
J. Kor. Inst. Surf. Engr., Jan. 1998, 31(1):54 - 59, Refereed

Growth of nitride layer for AISI 304 stainless steels used in ion nitriding
D.H. Shin; W. Choi; H.M. Inn; H.J. Kim; S.E. Nam
J. of Kor. Inst. of Met. & Mater, Aug. 1997, 35(8):1001 - 1008, Refereed

A study on the Adhesion of DLC films on the various substrates by PECVD method
W.K Choi; W. Choi; S.E. Nam; H.J. Kim
Kor. J. Mater. Reaseach, Jul. 1997, 17(7):582 - 587

Solid phase epitaxy of amorphous Si films by suppression of surface SiO2 layer formation using heating-up under Si2H6 gas environment
T.H. Choe; W. Choi; H.J. Kim
J. Kor. Phys. Soc, Jun. 1997, 30:302 - 306, Refereed

Mechanical properties of high strength Aluminum alloy composites reinforced by SiC particles
E.G. Lee; W. Choi; S.E. Nam
J. Kor. Foundrymen’s Soc., Apr. 1997, 17(2):164 - 170, Refereed

Effects of additive gases(H2 and N) of DLC films deposited by rf PECVD
W. Choi; S.E. Nam; H.J. Kim
Kor. J. Mater. Reaseach, Jan. 1997, 7(1):8 - 15, Refereed

The residual stress of DLC films deposited by rf PECVD
W. Choi; S.E. Nam; H.J. Kim
Kor. J. of Mater. Reaseach, Dec. 1996, 6(12):1162 - 1170

Changes of adhesion strength and residual stress of DLC films with various underlayers
W. Choi; S.E. Nam
弘益大論集, Dec. 1996, 7:299 - 310

Study on the soft magnetic properties of FeTaNC nanocrysatlline thin films
D.H. Shin; T.H. Koh; W. Choi; H.J. Kim
弘益大論集, Dec. 1996, 7:311 - 320

A study on the residual stress of diamond-like carbon films deposited by magnetically enhanced rf PECVD
W. Choi; D.H. Shin; S.E. Nam; H.J. Kim
Mat. Resr. Soc. Symp. Proc, Dec. 1996, 441:671 - 676, Refereed

Effects on reactive gas compositions on the magnetic properties and microstructures of FeTaNC films
T.H. Koh; D.H. Shin; W. Choi; D.H. Ahn; S.E. Nam; H.J Kim
Mat. Resr. Soc. Symp. Proc., Dec. 1996, 441:169 - 174, Refereed

Suppression of surface SiO2 layer and solid phase epitaxy of amorphously deposited Si films using heating-up under Si2H6 environment
T.H. Choe; W. Choi; S.E. Nam; H.J. Kim
Mat. Res. Soc. Symp. Proc, Dec. 1996, 448:345 - 350, Refereed

Soft Magnetic properties of FeTaNC nanocrystalline films
D.H. Shin; W. Choi; D.H. Ahn; H.J. Kim; N.S. Nam
Jpn. Institute Electronics Infom. and Communication Enger, Nov. 1996, MR-96(59):43 - 50

Soft magnetic properties of FeTaNC manocrystalline films
D.H. Shin; W. Choi; D.H. Ahn; H.J. Kim; N.S. Nam
J. Kor. Inst. of Surf. Engr., Oct. 1996, 29(5):393 - 398, Refereed

Effects of impurities on the crystallization and grain growth of polycrystalline Si films
J.C. Back; W. Choi; S.E. Nam; H.J. Kim
Mat. Res. Soc. Symp. Proc., Dec. 1995, 403:385 - 391, Refereed

The soft magnetic properties of FeMX(M=Mo, X=N,C) films
D.H. Shin; W. Choi; H.J. Kim
弘益大論集, Dec. 1995, 6:689 - 698

Laser beam weldability of steel plates for automobile
J.O. Kim; W. Choi; H.Y. Kim; K.L. Choi; B.Y. Lee
大田産業大論集, Dec. 1995, 12(2):5 - 14

Mechanical alloying behavior in the immiscible Al-Bi alloy system
H.Y. Kim; W. Choi; K.L. Choi
大田産業大論集, Dec. 1995, 12(2):15 - 23

The magnetic properties and microstructures for FeMX(M=Mo, X=N,C) films
D.H.Shin; W. Choi; D.H. Ahn; H.J. Kim; S.E. Nam
J. Kor. Mag. Soc., Oct. 1995, 5(5):874 - 880, Refereed

A Study on the Width Spread in Flat Rolling of Spring Steel
J.S. Park; W. Choi; S.E. Nam
Transactions of Materials Processing, Jun. 1995, 4(2):151 - 158, Refereed

Mechanical alloying behavior in the V-Al(-Zr) systems
W. Choi; H.Y. Kim; S.E. Nam
J. Kor. Inst. of Met. & Mater., Dec. 1992, 30(12):1521 - 1528, Refereed

A study on microstructure of V-Al alloy by mechanical allying
W. Choi; H.Y. Kim; S.E. Nam
J. Kor. Foundrymen’s Soc., Dec. 1991, 11(6):455 - 462, Refereed

微細シリコンTSVの走査型レーザビーム誘起電流評価
Tadashi Suetsugu
MES2018, 06 Sep. 2018

SLBIC法を用いたブラインドシリコンTSV評価
崔雲; 末次正
応用物理学会九州支部講演会, 03 Dec. 2017, 応用物理学会九州支部

微細CPWの高周波伝送特性評価
小川剛司; 韓栄建; 崔雲; 末次正; 鈴木孝将
応用物理学会九州支部講演会, 03 Dec. 2017, 応用物理学会九州支部

High frequency transmission properties of ultra-fine line CPW fabricated High frequency transmission properties of ultra-fine line CPW fabricated using SAP and damascene process
Takashi Okawa; Yonggun Han; Woon Choi; Tadashi Suetsugu; Takayuki Suzuki
Joint Symposium on Electronic Materials, 31 Aug. 2017, Pusan University

3次元実装ためのシリコンTSV故障評価
Woon Choi; Tadashi Suetsugu
MES2017, 30 Aug. 2017, JIEP

SAPとダマシン工程による微細CPW伝送線路の高周波伝送特性評価
Takashi Ogawa; Yonggun Han; Woon Choi; Takayuki Suzuki
MES2017, 30 Aug. 2017, JUEP

Scanning laser beam induced current evaluation of Via-first process through silicon via
Woon Choi
The 15th International Symposium on Microelectronics and Packaging(ISMP2016), 24 Oct. 2016

Manufacturing reliability of via-first through silicon via using scanning-laser-beam-induced current method
Woon Choi; Hajime Tomokage
The 13th International Conference on Beam Injection Assesment of Microstructures in Semiconductors (BIAMS2016), 07 Jun. 2016

走査型レーザビーム誘起電流法を用いたシリコン貫通電極内の銅シード層形成評価
崔雲; 友景肇
205年度応用物理学会九州支部講演会, Dec. 2015

Evaluation of a first via process through-silicon-via using scanning laser beam induced current (SLBIC) method
Woon Choi; Takashiro Ishimoto; Hajime tomokage
The 18th Joint Symposium on Elecronic Materials (JSEM2015), Aug. 2015

Residual stress evaluation of flip chip bonding using test element group chips with piezo-resistrors
K. Nanami; H. Kamata; T. Enami; O. Horiuhci; Y.G. Han; W. Choi; H. Tomokage
The18th Joint Symposium on Electronic Materials (JSEM2015), Aug. 2015

低温低応力微細実装技術の研究開発
加藤義尚; 韓榮建; 堀内整; 崔雲; 友景肇
JPCA2015, Jun. 2015

走査型電子ビーム・レーザビーム誘起起電流法を用いたシリコン貫通電極の評価
石本貴紘; 崔雲; 友景肇
２０１４年度応用物理学会九州支部講演会, Dec. 2014

ピエゾ抵抗搭載ＴＥＧチップを用いたＦＣボンディング工程での応力評価
那波恭介; 江南俊夫; 堀内整; 崔雲; 友景肇
2014年度応用物理学会九州支部講演会, Dec. 2014

Defect analysis for silicon interposer TSV using laser beam induced current system
Woon Choi; Younggun Han; Osamu Horiuchi; Haruki Sueyoshi; Yoshihisa Katoh; Hajime Tomokage
The 12th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors (BIAMMS12), Jun. 2014

Reliablility evaluation for device embedded substrates using bending method
Shintaro So; Younggun Han; Osamu Horiuchi; Woon Choi; Yoshihisa Katoh; Hajime Tomokage
The 17th Joint Symposium on Electronic Materials (JSEM2014), Jun. 2014

Development of test element group (TEG) chips with built-in piezo resistors
Kyousuke Nanami; Shintaro So; Kouki Nakamura; Younggun Han; Osamu Horiuchi; Woon Choim; Yoshihisa Katoh; Hajime Tomokage
The 17th Joint Symposium on Electronic Materials (JSEM2014), Jun. 2014

Evaluation of through-silicon-via (TSV) by scanning laser beam induced current (SLBIC) method
Takahiro Ishimoto; Woon Choi; Hajime Tomokage
The 17th Joint Symposium on Electronic materials (JSEM2014), Jun. 2014

落下試験時の基板内臓抵抗過度変化
池原寛介; 那波恭介; 韓 榮建; 堀内 整; 崔 雲; 加藤 義尚; 友景 肇
エレクトロニクス実装学会講演大会, Mar. 2014

4点曲げ試験法を用いた基板内蔵部品の信頼性評価
宗 真太郎; 竹内友裕; 那波恭介; 韓 榮建; 堀内 整; 崔 雲; 加藤 義尚; 友景 肇
エレトロ二クス実装学会講演大会, Mar. 2014

部品内蔵基板の4点曲げ試験信頼性評価
竹内友裕; 那波恭介; 池原寛介; 宗 真太郎; 韓 榮建; 堀内 整; 崔 雲; 加藤 義尚; 友景 肇
応用物理九州支部学術講演会, 30 Nov. 2013

曲げ試験法を用いた基板内埋め込み素子の信頼性試験
宗 真太郎; 韓 榮建; 堀内 整; 崔 雲; 加藤 義尚; 友景 肇
マイクロエレトロ二クスシンポジウム, 13 Sep. 2013

Reliability Test of Discrete Devices Embedded inside Substrates using Three-Point Bending Method
Shintaro So; Young Gun Han; Osamu Horiuchi; Woon Choi; Yoshihisa Katoh; Hajime Tomokage
16th Joint Symposium on Electronic Materials, Aug. 2013

PE-CVD process evaluation using a cross domain analyser
Yumeto Yoshida; Woon Choi; Hajime Tomokage
16th Joint Symposium on Electronic Materials, Aug. 2013

Application of Imprint Technology to Fabricating Printed Circuit Boards
Yasunari Shintani; Osamu Horiuchi; Young Gun Han; Yoshihisa Katoh; Woon Choi; Hajime Tomokage
16th Joint Symposium on Electronic Materials, Aug. 2013

部品内蔵基板の信頼性試験と評価結果
加藤義尚; 堀内整; 韓榮建; 館伸哉; 宗真太郎; 崔雲; 友景肇
2013 JIEP 最先端実装技術シンポジウム, 07 Jun. 2013

Maskless elctroplating of copper on diamond-like carbon films modified by scanning probe method
Shigehiro Hayashi; Woon Choi; Hajime Tomokage
Int. Conf. on Electronics Packaging, 12 Apr. 2013

Identification of through silicon via (TSV) failure point using time domain reflectometry (TDR) method
Keiji Matsumoto; Hiroaki Otsuka; Osamu Horiuchi; Young Gun Han; Woon Choi; Hajime Tomokage
Int. Conf. on Electronics Packaging, 10 Apr. 2013

部品内蔵基板の信頼性試験と評価結果
加藤 義尚; 館 伸哉; 韓 榮建; 堀内 整; 崔 雲; 友景 肇
エレクトロニクス実装学会, 13 Mar. 2013

TDR法用いたTSV接続不良箇所の特定
西山遼太郎; 大塚裕明; 崔雲; 友景肇; 松本圭司
応用物理学会九州支部学術講演会, 01 Dec. 2012

部品内蔵基板の高温振動試験及びリプロー試験信頼性評価
宗真太郎; 館伸哉; 韓榮建; 堀内整; 崔雲; 友景肇
応用物理学会九州支部学術講演会, 01 Dec. 2012

TDR法によるTSV接続不良の評価
大塚裕明; 韓榮建; 堀内整; 崔雲; 友景肇; 松本圭司
JIEPマイクロエレクトロニクスシンポジウムＭＥＳ２０１２, 13 Sep. 2012

Electrical characteristics and reliability evaluation of 80um pitch TEG chip in device-embedded substrate
Shinya Yakata; Young Gun Han; Osamu Horiuchi; Woon Choi; Hajime Tomokage
15th Joint Symposium on Electronic Materials, 21 Aug. 2012

Study on distrubution and strength for wafer thinning for TSV
Yoshidisa Maki; Haruki Sueyoshi; Kanta Nokita; Woon Choi; Hajime Tomokage
15th Joint Symposium on Electronic Materials, 21 Aug. 2012

Failure anaiysis of trough silicon via using time domain reflectometry mehod
Hiroaki Otsuka; Young Gun Han; Osamu Horiuchi; Woon Choi; Hajime Tomokage
15th Joint Symposium on Electronic Materials, 21 Aug. 2012

Changing interlayer capcitance value after Cu stud-bump
Shoko Araki; Yoshiyuki Arai; Osamu Horiuchi; Shigehiro Hayashi; Woon Choi; Hajime Tomokage
15th Joint Symposium on Electronic Materials, 21 Aug. 2012

Development of device embedded substrate for high density packaging
Yasunari Shitani; Shigehiro Hayashi; Osamu Horiuchi; Woon Choi; Hajime Tomokage
15th Joint Symposium on Electronic Materials, 21 Aug. 2012

Spectrum measurement of the plasma discharge in CVD chamber
Yumeto Yoshida; Yuki Watanabe; Woon Choi; Hajime Tomokage
15th Joint Symposium on Electronic Materials, 21 Aug. 2012

Reduction of thescallop of through silicon via
Yoshikuni Migiyama; Hauyuki Sueyoshi; Osamu Horiuchi; Woon Choi; Hajime Tomokage
15th Joint Symposium on Electronic Materials, 21 Aug. 2012

半導体パッケージSOT89を用いたダイアタッチ剥離幅と熱抵抗関係評価
江村直之; 崔 雲; 友景肇
応用物理学会九州支部学術講演会2011, 27 Nov. 2011

シリコンインターポーザTSVの高周波特性評価
稲田洸成; 松本圭司; 堀内整; 崔 雲; 友景肇
応用物理学会九州支部学術講演会2011, 27 Nov. 2011

小型半導体パッケージの微小剥離による熱抵抗変化
崔 雲; 江村直之; 友景肇
第21回マイクロエレトロ二クスシンポジウム, 09 Sep. 2011

Four point bending of test element group (TEG) chips with Low-k material after plasma processing
Shinya Yakata; Young Gun Han; Woon Choi; Hajime Tomokage
14th Joint Symposium on Electronic Materials, 19 Aug. 2011

Characterization of oxide in metal oxide semiconductor (MOS) structures with a scanning electron and laser beams induced current (SELBIC) system
Shin-ichi Takasu; Haruki Sueyoshi; Young Gun Han; Woon Choi; Hajime Tomokage
14th Joint Symposium on Electronic Materials, 19 Aug. 2011

Development of silicon interpose and test element group (TEG) chip with through silicon via (TSV) for high density packaging
Yoshikumi Migiyama; Yoshihisa Marki; Haruki Sueyoshi; Osamu Horiuchi; Woon Choi; Hajime Tomokage
14th Joint Symposium on Electronic Materials, 19 Aug. 2011

High frequency performance of through-silicon-via (TSV) chips staked on a silicon interposer
Hiroaki Otsuka; Young Gun Han; Haruki Sueyoshi; Woon Choi; Hajime Tomokage
14th Joint Symposium on Electronic Materials, 19 Aug. 2011

Copper wire bonding to advanced LSI with Low-k insulating materials
Shoko Araki; Yoshiyuki Arai; Shigehiro Hayashi; Osamu Horiuchi; Woon Choi; Hajime Tomokage
14th Joint Symposium on Electronic Materials, 19 Aug. 2011

Evaluation of assembling process with test element group (TEG) chips with Low-k insulating materials
Tetsuya Todaka; Osamu Horiuchi; shigehiro Hayashi; Woon Choi; Hajime Tomokage
14th Joint Symposium on Electronic Materials, 19 Aug. 2011

レーザ分光多点照射によるMEMSウェハ振動解析
吉田圭佑; 末吉晴樹; 安河内裕司; 今井一宏; 崔 雲; 友景肇
エレクトロ二クス実装学会春季学術講演大会2011, 10 Mar. 2011

Low-K TEGを用いたボンディングともールディング工程の評価
右山芳国; 戸?徹哉; 堀内整; 林繁宏; 崔 雲; 友景肇
応用物理学会九州支部学術講演会, 27 Nov. 2010

４点曲げ装置を用いたCu/low-k TEGウエハの電気特性応力変動
館伸哉; 升本睦; 韓榮建; 崔 雲; 友景肇
応用物理学会九州支部学術講演会, 27 Nov. 2010

レーザ多点同時照射によるMEMSウェハ駆動解析
鶴田彩香; 吉田圭佑; 安河内裕司; 今井一宏; 崔 雲; 友景肇
応用物理学会九州支部学術講演会, 27 Nov. 2010

走者型電子ビーム・レーザビーム誘起電流(SELBIC)測定装置を用いたシリコン貫通電極(TSV)評価
田村智宏; 末吉晴樹; 高洲信一; 崔 雲; 友景肇
応用物理学会九州支部学術講演会, 27 Nov. 2010

走者型電子ビーム・レーザビーム誘起電流(SELBIC)測定装置を用いた酸化膜評価
高洲信一; 小野真理子; 末吉晴樹; 崔 雲; 友景肇
応用物理学会九州支部学術講演会, 27 Nov. 2010

Effect of UBM plating on electrical properties of low-k TEG
Tetsuya Todaka; Takahiro Matsumoto; Sigehiro Hayashi; Osumu Horiuchi; Woon Choi; Hajime Tomokage
13rd Joint Symposium on Electronic Materials, 27 Aug. 2010

Vibration analysis of MEMS wafers by laser dispersion multipoint irradiating method
Keisuke Yoshida; Kasuhiro Imai; Yuji Yasukouchi; Woon Choi; Hajime Tomokage
13rd Joint Symposium on Electronic Materials, 27 Aug. 2010

Interconnection properties of Low-k TEG wafers under stress applied by four point bending method
Mutsumi Masumoto; Younggun Han; Osamu Horiuchi; Go Kwashiri; Woon Choi; Hajime Tomokage
Int. Conf. on Electronics Packaging (ICEP2010), May 2010

レーザ分光多点照射によるMEMSウェハ振動解析
吉田圭佑; 末吉晴樹; 安河内裕司; 今井一宏; 崔 雲; 友景肇
エレクトロ二クス実装学会春季学術講演大会, 12 Mar. 2010

半導体パッケージのリアルタイム解析のための熱管理システム
池田皓貴; 松永佳之; 末吉晴樹; 崔 雲; 友景肇
応用物理学会九州支部学術講演大会, 21 Nov. 2009

ＴＳＶを用いたシリコンインタポーザの設計と高周波特性評価
江口雅哉; 林 三照; 中居誠也; 堀内整; 崔 雲; 友景肇
応用物理学会九州支部学術講演大会2009, 21 Nov. 2009

バンドパスフィター内臓プローブSwPの高周波特性
中武大輔; 新谷宣明; 升本睦; 堀内整; 崔 雲; 友景肇
応用物理学会九州支部学術講演大会2009, 21 Nov. 2009

Low-k TEG(test element group)を用いた組立工程のおける機械的ダメージ評価
小杉享; 中居誠也; 升本睦; 韓榮健; 山田毅; 堀内整; 崔 雲; 友景肇
応用物理学会九州支部学術講演大会2009, 21 Nov. 2009

四点曲げ負荷によるlow-kＴＥＧチップの電気特性変動試験
佐野幸太郎; 川尻剛; 韓榮健; 崔 雲; 友景肇
応用物理学会九州支部学術講演大会2009, 21 Nov. 2009

Low-k配線TEGを用いた半導体パッケージ組立工程の評価
松本崇裕; 升本睦; 崔 雲; 友景肇; 森下順; 堀内整; 山田毅
第19回マイクロエレクトロニクスシンポジウム, 11 Sep. 2009

バンドパスフィルターを内蔵した高周波プローブsystem with probe (SwP)
松本圭司; 斉藤亮太; 崔 雲; 友景肇
第19回マイクロエレトロ二クスシンポジウム, 11 Sep. 2009

Evaluation of electrical property fluctuation of Low-k TEG by four-point bending method
Go Kawashiri; Yong Gun Han; Osamu Horiuchi; Mutumi Msumoto; Woon Choi; Hajime Tomokage
12th Joint Symposium on Electronic Materials, 24 Aug. 2009

Evaluation of assembly process using interlayer capacitance in Low-k TEG
Akira Kosugi; Seiya Nakai; Matsumi Masumoto; Young Gun Han; Takeshi Yamada; Osamu Horiuchi; Woon Choi; Hajime Tomokage
12th Joint Symposium on Electronic Materials, 24 Aug. 2009

Evaluation of water absorbability using Low-k TEG
Nobuaki Shintani; Osamu Horiuchi; Mstsumi Maasumoto; Woon Choi; Hajime Tomokage
12th Joint Symposium on Electronic Materials, 24 Aug. 2009

Design and development of silicon interlayer test element group (TEG) for three dimensional through hole via (TSV) packaging technology
Mituaki Hayashi; Seiya Nakai; Osamu Horiuchi; Woon Choi; Hajime Tomokage
12th Joint Symposium on Electronic Materials, 24 Aug. 2009

Thermal management system of semiconductor packages for real time analysis
Haruki Sueyoshi; Woon Choi; Hajime Tomokage
12th Joint Symposium on Electronic Materials, 24 Aug. 2009

Maskless copper pattering on modified diamond like carbon films using scanning probe field emission current method
Shegehiro Hayashi; Yonggun Han; Woon Choi; Hajime Tomokage
12th Joint Symposium on Elecronic Materials, 24 Aug. 2009

Band pass filter embedded SwP (System with Probe) for high frequency probe
Keiji Matsumoto; Taishi Hoashi; Ryota Saito; Woon Choi; Hajime Tomokage
12th Joint Symposium on Electronic Materials, 24 Aug. 2009

Evaluation of Kef-check pattern at each assembly process by using low-k TEG
akahiro Matsumoto; Seiya Nakai; Mutsumi Masumoto; Younggun Han; Tsuyoshi Yamada; Osamu Horiuchi; Woon Choi; Hajime Tomokage
12th Joint Symposium on Elecronic Materials, 24 Aug. 2009

A novel testing method of micro-electro mechanical system (MEMS) devices using microscopic multipoint vibrometer
Keisuke Yoshida; Haruki Sueyoshi; Woon Choi; Hajime Tomokage
12th Joint Symposium on Electronic Materials, 24 Aug. 2009

走査電子・レーザビー誘起電流(SELBIC)測定装置の現状
高洲信一; 末吉晴樹; 吉田圭祐; 崔 雲; 友景 肇
日本顕微鏡学会第65回学術講演会, 26 May 2009

TDR法用いたフリップチップAuバンプ接続の非破壊解析
新谷宣明; 進 健範; 韓榮建; 崔 雲; 友景 肇
エレクトロニクス実装学会講演大会, Mar. 2009

Japan Institute of Electronics Packaging