Alignment control of self-assembling Si quantum dots
Yuki Imai; Ryoya Tsuji; Katsunori Makihara; Noriyuki Taoka; Akio Ohta; Seiichi Miyazaki
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Aug. 2023, 162

Layer transfer of ultrathin Ge crystal segregated on Al/Ge(111) structure
Keigo Matsushita; Akio Ohta; Shigehisa Shibayama; Tomoharu Tokunaga; Noriyuki Taoka; Katsunori Makihara; Seiichi Miyazaki
JAPANESE JOURNAL OF APPLIED PHYSICS, Jun. 2023, 62(SG)

Formation of ultra-thin NiGe film with single crystalline phase and smooth surface
Shunsuke Nishimura; Noriyuki Taoka; Akio Ohta; Katsunori Makihara; Seiichi Miyazaki
JAPANESE JOURNAL OF APPLIED PHYSICS, Apr. 2023, 62(SC)

Evaluation of chemical structure and Si segregation of Al/Si(111)
Taiki Sakai; Akio Ohta; Keigo Matsushita; Noriyuki Taoka; Katsunori Makihara; Seiichi Miyazaki
JAPANESE JOURNAL OF APPLIED PHYSICS, Apr. 2023, 62(SC)

Effects of Cl passivation on Al2O3/GaN interface properties
Taisei Nagai; Noriyuki Taoka; Akio Ohta; Katsunori Makihara; Seiichi Miyazaki
JAPANESE JOURNAL OF APPLIED PHYSICS, Jan. 2023, 62(SA)

Study on Electron Emission from Phosphorus d-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures
K. Makihara; T. Takemoto; S. Obayashi; A. Ohta; N. Taoka; S. Miyazaki
IEICE TRANSACTIONS on Electronics, Oct. 2022, 105-C(10):610 - 615, Refereed

Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots
J. Wu; K. Makihara; H. Zhang; H. Furuhata; N. Taoka; A. Ohta; S. Miyazaki
IEICE TRANSACTIONS on Electronics, Oct. 2022, 105-C(10):616 - 621, Refereed

Impact of substrate heating during Al deposition and post annealing on surface morphology, Al crystallinity, and Ge segregation in Al/Ge(111) structure
Keigo Matsushita; Akio Ohta; Noriyuki Taoka; Shohei Hayashi; Katsunori Makihara; Seiichi Miyazaki
JAPANESE JOURNAL OF APPLIED PHYSICS, 01 Jul. 2022, 61(SH)

Characterization of electronic charged states of high density self-aligned Si-based quantum dots evaluated with AFM/Kelvin probe technique
Yuki Imai; Katsunori Makihara; Noriyuki Taoka; Akio Ohta; Seiichi Miyazaki
JAPANESE JOURNAL OF APPLIED PHYSICS, 01 Jun. 2022, 61(SD)

Study on silicidation reaction of Fe nanodots with SiH4
Hiroshi Furuhata; Katsunori Makihara; Yosuke Shimura; Shuntaro Fujimori; Yuki Imai; Akio Ohta; Noriyuki Taoka; Seiichi Miyazaki
APPLIED PHYSICS EXPRESS, 01 May 2022, 15(5)

Crystal structure change in multilayer GeH flakes by hydrogen desorption under ultrahigh vacuum environments
Itoh Mai; Araidai Masaaki; Ohta Akio; Nakatsuka Osamu; Kurosawa Masashi
JAPANESE JOURNAL OF APPLIED PHYSICS, 01 May 2022, 61(SC)

Segregation control for ultrathin Ge layer in Al/Ge(111) system
Akio Ohta; Masato Kobayashi; Noriyuki Taoka; Mistuhisa Ikeda; Katsunori Makihara; Seiichi Miyazaki
JAPANESE JOURNAL OF APPLIED PHYSICS, 01 Jan. 2022, 61(SA)

Effect of substrate temperature on plasma-enhanced self-assembling formation of high-density FePt nanodots
Shunsuke Honda; Katsunori Makihara; Noriyuki Taoka; Hiroshi Furuhata; Akio Ohta; Daiki Oshima; Takeshi Kato; Seiichi Miyazaki
JAPANESE JOURNAL OF APPLIED PHYSICS, 01 Jan. 2022, 61(SA)

Correlation between structures and vibration properties of germanene grown by Ge segregation
Shogo Mizuno; Akio Ohta; Toshiaki Suzuki; Hiroyuki Kageshima; Junji Yuhara; Hiroki Hibino
Applied Physics Express, 01 Dec. 2021, 14(12):125501 - 125501

Single germanene phase formed by segregation through Al(111) thin films on Ge(111)
J. Yuhara; H. Muto; M. Araidai; M. Kobayashi; A. Ohta; S. Miyazaki; S. Takakura; M. Nakatake; G. L. Lay
2D Materials, Oct. 2021, 8(4):045039 - 045039, Refereed

Epitaxial growth of massively parallel germanium nanoribbons by segregation through Ag(110) thin films on Ge(110)
Yuhara Junji; Shimazu Hiroki; Kobayashi Masato; Ohta Akio; Miyazaki Seiichi; Takakura Sho-ichi; Nakatake Masashi; Le Lay Guy
APPLIED SURFACE SCIENCE, 01 Jun. 2021, 550, Refereed

Surface flattening and Ge crystalline segregation of Ag/Ge structure by thermal anneal
Akio Ohta; Kenzo Yamada; Hibiki Sugawa; Noriyuki Taoka; Mitsuhisa Ikeda; Katsunori Makihara; Seiichi Miyazaki
JAPANESE JOURNAL OF APPLIED PHYSICS, 01 May 2021, 60(SB), Refereed
Lead

Energy band diagram for SiO2/Si system as evaluated from UPS analysis under vacuum ultraviolet with variable incident photon energy
Ohta Akio; Imagawa Takuya; Taoka Noriyuki; Ikeda Mitsuhisa; Makihara Katsunori; Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS, 01 Jan. 2021, 60(SA)
Lead

Effect of B-doping on photoluminescence properties of Si quantum dots with Ge core
Makihara Katsunori; Fujimori Shuntaro; Ikeda Mitsuhisa; Ohta Akio; Miyazaki Seiichi
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Dec. 2020, 120, Refereed

Characterization of photoluminescence from Si quantum dots with B delta-doped Ge core
Maehara Takuya; Fujimori Shuntaro; Ikeda Mitsuhisa; Ohta Akio; Makihara Katsunori; Miyazaki Seiichi
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 15 Nov. 2020, 119, Refereed

Hydrogen desorption from silicane and germanane crystals: Toward creation of free-standing monolayer silicene and germanene
Masaaki Araidai; Mai Itoh; Masashi Kurosawa; Akio Ohta; Kenji Shiraishi
Journal of Applied Physics, 28 Sep. 2020, 128(12):125301 - 125301

Electron Field Emission from Multiply-Stacked Si Quantum Dots Structures with Graphene Top-Electrode
T. Niibayashi; T. Takemoto; K. Makihara; A. Ohta; M. Ikeda; S. Miyazaki
Electrochemical Society (ECS) Transaction, Sep. 2020, 98(5):429 - 434, Refereed

Characterization of Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots by Using a Magnetic AFM Probe
J. Wu; H. Zhang; H. Furuhata; K. Makihara; M. Ikeda; A. Ohta; S. Miyazak
Electrochemical Society (ECS) Transaction, Sep. 2020, 98(5):493 - 498, Refereed

Crystallization of Ge Thin Films on Sapphire(0001) by Thermal Annealing
H. Sugawa; A. Ohta; M. Kobayashi; N. Taoka; M. Ikeda; K. Makihara; S. Miyazaki
Electrochemical Society (ECS) Transaction, Sep. 2020, 98(5):505 - 511, Refereed

Continuous Growth of Germanene and Stanene Lateral Heterostructures
Tsuyoshi Ogikubo; Hiroki Shimazu; Yuya Fujii; Koichi Ito; Akio Ohta; Masaaki Araidai; Masashi Kurosawa; Guy Le Lay; Junji Yuhara
ADVANCED MATERIALS INTERFACES, May 2020, 7(10)

Formation of ultrathin segregated-Ge crystal on Al/Ge(111) surface
Masato Kobayashi; Akio Ohta; Masashi Kurosawa; Masaaki Araidai; Noriyuki Taoka; Tomohiro Simizu; Mitsuhisa Ikeda; Katsunori Makihara; Seiichi Miyazaki
Japanese Journal of Applied Physics, 01 Apr. 2020, Refereed

Impact of surface pre-treatment on Pt-nanodot formation induced by remote H-2-plasma exposure
Fujimori Shuntaro; Makihara Katsunori; Ikeda Mitsuhisa; Ohta Akio; Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS, 01 Aug. 2019, 58

Comparative study of photoluminescence properties obtained from SiO2/GaN and Al2O3/GaN structures
Takada Noriharu; Taoka Noriyuki; Ohta Akio; Yamamoto Taishi; Nguyen Xuan Truyen; Yamada Hisashi; Takahashi Tokio; Ikeda Mitsuhisa; Makihara Katsunori; Shimizu Mitsuaki; Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS, 01 Aug. 2019, 58

Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots
Futamura Yuto; Makihara Katsunori; Ohta Akio; Ikeda Mitsuhisa; Miyazaki Seiichi
IEICE TRANSACTIONS ON ELECTRONICS, Jun. 2019, E102C(6):458-461

Impact of remote plasma oxidation of a GaN surface on photoluminescence properties
Takada Noriharu; Taoka Noriyuki; Yamamoto Taishi; Ohta Akio; Nguyen Xuan Truyen; Yamada Hisashi; Takahashi Tokio; Ikeda Mitsuhisa; Makihara Katsunori; Shimizu Mitsuaki; Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS, 01 Jun. 2019, 58

Evaluation of the potential distribution in a multiple stacked Si quantum dots structure by hard X-ray photoelectron spectroscopy
Futamura Yuto; Nakashima Yuta; Ohta Akio; Ikeda Mitsuhisa; Makihara Katsunori; Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS, Feb. 2019, 58(SA)

Characterization of electron charging and transport properties of Si-QDs with phosphorus doped Ge core
Nagai Ryo; Yamada Kentaro; Fujimori Shuntaro; Ikeda Mitsuhisa; Makihara Katsunori; Ohta Akio; Miyazaki Seiichi
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Dec. 2018, 33(12)

Local Structure of High Performance TiOxPassivating Layer Revealed by Electron Energy Loss Spectroscopy
T. Mochizuki; K. Gotoh; A. Ohta; Y. Kurokawa; S. Miyazaki; T. Yamamoto; N. Usami
2018 IEEE 7th WCPEC Proceeding, 29 Nov. 2018, :3896-3899 - 3899, Refereed

Germanene Epitaxial Growth by Segregation through Ag(111) Thin Films on Ge(111)
Yuhara, Junji; Shimazu, Hiroki; Ito, Kouichi; Ohta, Akio; Araidai, Masaaki; Kurosawa, Masashi; Nakatake, Masashi; Le Lay, Guy
ACS NANO, Nov. 2018, 12(11):11632 - 11637

Activation mechanism of TiOx passivating layer on crystalline Si
Mochizuki, Takeya; Gotoh, Kazuhiro; Ohta, Akio; Ogura, Shohei; Kurokawa, Yasuyoshi; Miyazaki, Seiichi; Fukutani, Katsuyuki; Usami, Noritaka
APPLIED PHYSICS EXPRESS, Oct. 2018, 11(10)

Total photoelectron yield spectroscopy of energy distribution of electronic states density at GaN surface and SiO2/GaN interface
Akio Ohta; Nguyen Xuan Truyen; Nobuyuki Fujimura; Mitsuhisa Ikeda; Katsunori Makihara; Seiichi Miyazaki
Japanese Journal of Applied Physics, 01 Jun. 2018, 57(6)

Evaluation of resistive switching properties of Si-rich oxide embedded with Ti nanodots by applying constant voltage and current
Akio Ohta; Yusuke Kato; Mitsuhisa Ikeda; Katsunori Makihara; Seiichi Miyazaki
Japanese Journal of Applied Physics, 01 Jun. 2018, 57(6)

Low-temperature formation of Ga-oxide/GaN interface with remote oxygen plasma and its interface properties
Taishi Yamamoto; Noriyuki Taoka; Akio Ohta; Nguyen Xuan Truyen; Hisashi Yamada; Tokio Takahashi; Mitsuhisa Ikeda; Katsunori Makihara; Mitsuaki Shimizu; Seiichi Miyazaki
Japanese Journal of Applied Physics, 01 Jun. 2018, 57(6)

Interface properties of SiO2/GaN structures formed by chemical vapor deposition with remote oxygen plasma mixed with Ar or He
Nguyen Xuan Truyen; Noriyuki Taoka; Akio Ohta; Katsunori Makihara; Hisashi Yamada; Tokio Takahashi; Mitsuhisa Ikeda; Mitsuaki Shimizu; Seiichi Miyazaki
Japanese Journal of Applied Physics, 01 Jun. 2018, 57(6)

Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma
Taishi Yamamoto; Noriyuki Taoka; Akio Ohta; Nguyen Xuan Truyen; Hisashi Yamada; Tokio Takahashi; Mitsuhisa Ikeda; Katsunori Makihara; Osamu Nakatsuka; Mitsuaki Shimizu; Seiichi Miyazaki
Japanese Journal of Applied Physics, 01 Jun. 2018, 57(6)

Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N2 ambient
Ito Koichi; Ohta Akio; Kurosawa Masashi; Araidai Masaaki; Ikeda Mitsuhisa; Makihara Katsunori; Miyazaki Seiichi
Japanese Journal of Applied Physics, 24 May 2018, 57(6):06HD08 - 06HD08

High thermal stability of abrupt SiO2/GaN interface with low interface state density
Nguyen Xuan Truyen; Noriyuki Taoka; Akio Ohta; Katsunori Makihara; Hisashi Yamada; Tokio Takahashi; Mitsuhisa Ikeda; Mitsuaki Shimizu; Seiichi Miyazaki
Japanese Journal of Applied Physics, 01 Apr. 2018, 57(4):04FG11, Refereed

Direct evaluation of electrical dipole moment and oxygen density ratio at high-k dielectrics/SiO2 interface by X-ray photoelectron spectroscopy analysis
Nobuyuki Fujimura; Akio Ohta; Mitsuhisa Ikeda; Katsunori Makihara; Seiichi Miyazaki
Japanese Journal of Applied Physics, 01 Apr. 2018, 57(4):04FB07

Segregated SiGe ultrathin layer formation and surface planarization on epitaxial Ag(111) by annealing of Ag/SiGe(111) with different Ge/(Si + Ge) compositions
Ito Koichi; Ohta Akio; Kurosawa Masashi; Araidai Masaaki; Ikeda Mitsuhisa; Makihara Katsunori; Miyazaki Seiichi
Japanese Journal of Applied Physics, 09 Mar. 2018, 57(4):04FJ05 - 04FJ05

Formation of Mn-germanide nanodots on ultrathin SiO2 induced by remote hydrogen plasma
Yinghui Wen; Katsunori Makihara; Akio Ohta; Mitsuhisa Ikeda; Seiichi Miyazaki
Japanese Journal of Applied Physics, 01 Jan. 2018, 57(1)

Electroluminescence of superatom-like Ge-core/Si-shell quantum dots by alternate field-effect-induced carrier injection
Katsunori Makihara; Mitsuhisa Ikeda; Nobuyuki Fujimura; Kentaro Yamada; Akio Ohta; Seiichi Miyazaki
Applied Physics Express, 01 Jan. 2018, 11(1)

Characterization of remote O2-plasma-enhanced CVD SiO2/GaN(0001) structure using photoemission measurements
Nguyen Xuan Truyen; Akio Ohta; Katsunori Makihara; Mitsuhisa Ikeda; Seiichi Miyazaki
Japanese Journal of Applied Physics, 01 Jan. 2018, 57(1)

High Density Formation and Magnetoelectronic Transport Properties of Fe3Si Nanodots
H. Zhang; K. Makihara; M. Ikeda; A. Ohta; S. Miyazaki
Electrochemical Society Transaction, 2018, 86(7):131 - 138, Refereed

Impact of phosphorus doping to multiple-stacked Si quantum dots on electron emission properties
Daichi Takeuchi; Katsunori Makihara; Akio Ohta; Mitsuhisa Ikeda; Seiichi Miyazaki
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Nov. 2017, 70:183 - 187

First-principles study on adsorption structure and electronic state of stanene on alpha-alumina surface
Masaaki Araidai; Masashi Kurosawa; Akio Ohta; Kenji Shiraishi
JAPANESE JOURNAL OF APPLIED PHYSICS, Sep. 2017, 56(9)

Characterization of Interfacial Dipoles at Dielectric Stacks by XPS Analysis
S. Miyazaki; A. Ohta; N. Fujimura
Electrochemical Society Transaction, Sep. 2017, 80(1):229-235

Magnetoelectronic transport of double stack FePt nanodots
Katsunori Makihara; Taiga Kawase; Akio Ohta; Mitsuhisa Ikeda; Seiichi Miyazaki
APPLIED PHYSICS LETTERS, Jul. 2017, 111(5)

Low-temperature formation of crystalline Si:H/Ge:H heterostructures by plasma-enhanced CVD in combination with Ni-nanodots seeding nucleation
Yimin Lu; Katsunori Makihara; Daichi Takeuchi; Mitsuhisa Ikeda; Akio Ohta; Seiichi Miyazaki
JAPANESE JOURNAL OF APPLIED PHYSICS, Jun. 2017, 56(6)

Potential changes and chemical bonding features for Si-MOS structure as evaluated from HAXPES analysis
Akio Ohta; Hideki Murakami; Mitsuhisa Ikeda; Katsunori Makihara; Eiji Ikenaga; Seiichi Miyazaki
MICROELECTRONIC ENGINEERING, Jun. 2017, 178:80 - 84

Evaluation of energy distribution of filled defects of Si oxide thin films from total photoelectron yield spectroscopy
Akio Ohta; Mitsuhisa Ikeda; Katsunori Makihara; Seiichi Miyazaki
MICROELECTRONIC ENGINEERING, Jun. 2017, 178:85 - 88

Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors
Yusuke Kato; Akio Ohta; Mitsuhisa Ikeda; Katsunori Makihara; Seiichi Miyazaki
IEICE TRANSACTIONS ON ELECTRONICS, May 2017, E100C(5):468 - 474

Photoemission Study of Gate dielectrics on Gallim Nitride
S. Miyazaki; N. Truyen; A. Ohta; T. Yamamoto
Electrochemical Society Transaction, May 2017, 79(1):119-127

Photoemission study on electrical dipole at SiO2/Si and HfO2/SiO2 interfaces
Nobuyuki Fujimura; Akio Ohta; Mitsuhisa Ikeda; Katsunori Makihara; Seiichi Miyazaki
JAPANESE JOURNAL OF APPLIED PHYSICS, Apr. 2017, 56(4)

Processing and characterization of Si/Ge quantum dots
S. Miyazaki; K. Makihara; A. Ohta; M. Ikeda
Technical Digest - International Electron Devices Meeting, IEDM, 31 Jan. 2017, :33.2.1 - 33.2.4, Refereed

High-density formation of Ta nanodot induced by remote hydrogen plasma
Yaping Wang; Daichi Takeuchi; Akio Ohta; Mitsuhisa Ikeda; Katsunori Makihara; Seiichi Miyazaki
JAPANESE JOURNAL OF APPLIED PHYSICS, Jan. 2017, 56(1)

Effects of remote hydrogen plasma on chemical bonding features and electronic states of 4H-SiC(0001) surface
Nguyen Xuan Truyen; Akio Ohta; Katsunori Makihara; Mitsuhisa Ikeda; Seiichi Miyazaki
JAPANESE JOURNAL OF APPLIED PHYSICS, Jan. 2017, 56(1)

Nano spin-diodes using FePt-NDs with huge on/off current ratio at room temperature
Katsunori Makihara; Takeshi Kato; Yuuki Kabeya; Yusuke Mitsuyuki; Akio Ohta; Daiki Oshima; Satoshi Iwata; Yudi Darma; Mitsuhisa Ikeda; Seiichi Miyazaki
SCIENTIFIC REPORTS, Sep. 2016, 6:33409(7pages), Refereed

Surface-segregated Si and Ge ultrathin films formed by Ag-induced layer exchange process
Kurosawa Masashi; Ohta Akio; Araidai Masaaki; Zaima Shigeaki
Japanese Journal of Applied Physics, 05 Jul. 2016, 55(8):08NB07 - 08NB07, Refereed

Evaluation of Valence Band Top and Electron Affinity of SiO2 and Si-based Semiconductors Using XPS
N. Fujimura; A. Ohta; K. Makihara; S. Miyazaki
Japanese Journal of Applied Physics, Jul. 2016, 55(8S2):08PC06(5pages), Refereed

Impact of Embedded Mn Nanodots on Resistive Switching Characteristics of Si-rich Oxides as Measured in Ni-Electrodes MIM Diodes
T. Arai; A. Ohta; K. Makihara; S. Miyazaki
Japanese Journal of Applied Physics, May 2016, 55(6S1):06GH07(5pages), Refereed

Study on electroluminescence from multiply-stacking valency controlled Si quantum dots
Takahisa Yamada; Katsunori Makihara; Akio Ohta; Mitsuhisa Ikeda; Seiichi Miyazaki
THIN SOLID FILMS, Mar. 2016, 602(1):48 - 51, Refereed

Evaluation of field emission properties from multiple-stacked Si quantum dots
Daichi Takeuchi; Katsunori Makihara; Akio Ohta; Mitsuhisa Ikeda; Seiichi Miyazaki
THIN SOLID FILMS, Mar. 2016, 602(1):68 - 71, Refereed

Bonding and Energy Alignment at Metal/TiO2 interfaces: A Density Functional Theory Study
H. Chen; P. Li; N. Umezawa; H. Abe; J. Ye; K. Shiraishi; A. Ohta; S. Miyazaki
The Journal of Physical Chemistry, Feb. 2016, 120(10):5549-5556, Refereed

Evaluation of dielectric function of thermally-grown SiO2 and GeO2 from energy loss signals for XPS core-line photoelectrons
Taishi Yamamoto; Akio Ohta; Mitsuhisa Ikeda; Katsunori Makihara; Seiichi Miyazaki
ECS Transactions, 2016, 75(8):777 - 783, Refereed

Effect of Ge core size on photoluminescence from Si quantum dots with Ge core
Kentaro Yamada; Keigo Kondo; Katsunori Makihara; Mitsuhisa Ikeda; Akio Ohta; Seiichi Miyazaki
ECS Transactions, 2016, 75(8):695 - 700, Refereed

Formation and Characterization of High Density FeSi Nanodots on SiO2 Induced by Remote H2 Plasma
H. Zhang; K. Makihara; A. Ohta; M. Ikeda; S. Miyazaki
Japanese Journal of Applied Physics, Dec. 2015, 55(1S):01AE20 (4pages), Refereed

The Interface Analysis of GaN Directly Grown on 0º off 6H-SiC
Z. Sun; A. Ohta; S. Miyazaki; K. Nagamatsu; M. Olsson; Z. Ye; M. Deki; Y. Honda; H. Amano
Japanese Journal of Applied Physics, Dec. 2015, 55(1):10303 - 10303, Refereed

High Density Formation of FePt Alloy Nanodots Induced by Remote Hydrogen Plasma and Characterization of their Magnetic Properties
R. Fukuoka; K. Makihara; H. Zhang; A. Ohta; T. Kato; S. Iwata; M. Ikeda; S. Miyazaki
Transactions of the Materials Research Society of Japan, Dec. 2015, 40(4):347-350, Refereed

Increase in the work function of W/WO3 by helium plasma irradiation
S. Kajita; A. Ohta; T. Ishida; K. Makihara; T. Yoshida; N. Ohno
Japanese Journal of Applied Physics, Nov. 2015, 54(12):126201(6pages), Refereed

High-Resolution Photoemission Study of High-k Dielectric Bilayer Stack on Ge(100)
S. Miyazaki; A. Ohta
Electrochemical Society Transaction, Oct. 2015, 69(10):165-170, Refereed

Photoemission Study on Chemical Bonding Features and Electronic Defect States of Thermally-grown SiO2/4H-SiC Structure
H. Watanabe; A. Ohta; K. Makihara; S. Miyazaki
Electrochemical Society Transaction, Oct. 2015, 69(10):179-186, Refereed

Progress in determination method for ultrathin Si-based oxide bandgaps from analysis of energy loss signals for photoelectrons
Akio Ohta; Hideki Murakami; Katsunori Makihara; Seiichi Miyazaki
JAPANESE JOURNAL OF APPLIED PHYSICS, Jun. 2015, 54(6):06FH08(5pages), Refereed

Electronic Defect States in Thermally-grown SiO2/4H-SiC Structure Measured by Total Photoelectron Yield Spectroscopy
A. Ohta; K. Makihara; S. Miyazaki
Microelectronic Engineering, May 2015, 147:264-268, Refereed

Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements
Akio Ohta; Chong Liu; Takashi Arai; Daichi Takeuchi; Hai Zhang; Katsunori Makihara; Seiichi Miyazaki
IEICE TRANSACTIONS ON ELECTRONICS, May 2015, E98C(5):406 - 410, Refereed

Resistive switching characteristics of Si-rich oxides with embedding Ti nanodots
Yusuke Kato; Takashi Arai; Akio Ohta; Katsunori Makihara; Seiichi Miyazaki
ECS Transactions, 2015, 69(10):291 - 298, Refereed

Properties of Al Ohmic Contacts to n-type 4H-SiC employing a Phosphorus-Doped and Crystallized Amorphous-Silicon Interlayer
Hiroaki Hanafusa; Akio Ohta; Ryuuhei Ashihara; Keisuke Maruyama; Tsubasa Mizuno; Shohei Hayashi; Hideki Murakami; Seiichiro Higashi
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780:649 - 652, Refereed

Characterization of Chemical Bonding Features and Interfacial Reactions in Ge-MIS Structure with HfO2/TaGexOy Dielectric Stack
Akio Ohta; Hideki Murakami; Kuniaki Hashimoto; Katsunori Makihara; Seiichi Miyazaki
SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES, 2014, 64(6):241 - 248, Refereed

Pre-Amorphization and Low-Temperature Implantation for Efficient Activation of Implanted As in Ge(100)
Hideki Murakami; Shinya Hamada; Takahiro Ono; Kuniaki Hashimoto; Akio Ohta; Hiroaki Hanafusa; Seiichiro Higashi; Seiichi Miyazaki
SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES, 2014, 64(6):423 - 429, Refereed

Characterization of Electron Emission from High Density Self-aligned Si-based Quantum Dots by Conducting-Probe Atomic Force Microscopy
Daichi Takeuchi; Katsunori Makihara; Akio Ohta; Mitsuhisa Ikeda; Seiichi Miyazaki
SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES, 2014, 64(6):923 - 928, Refereed

Photoluminescence Study of Si Quantum Dots with Ge Core
Katsunori Makihara; Keigo Kondo; Mitsuhisa Ikeda; Akio Ohta; Seiichi Miyazaki
SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES, 2014, 64(6):365 - 370, Refereed

Characterization of resistive switching behaviors of RF sputtered Si oxide resistive random access memories with Ti-based electrodes
Akio Ohta; Motoki Fukusima; Katsunori Makihara; Hideki Murakami; Seiichiro Higashi; Seiichi Miyazaki
Japanese Journal of Applied Physics, Nov. 2013, 52(11):11NJ06, Refereed

Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-electrode MIM Diodes
A. Ohta; K. Makihara; M. Fukusima; H. Murakami; S. Higashi; S. Miyazaki
Electrochemical Society Transaction, Oct. 2013, 58(9):293-300, Refereed

Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior
Akio Ohta; Katsunori Makihara; Mitsuhisa Ikeda; Hideki Murakami; Seiichiro Higashi; Seiichi Miyazaki
IEICE TRANSACTIONS ON ELECTRONICS, May 2013, E96C(5):702 - 707, Refereed

X-ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures
A. Ohta; K. Makihara; S. Miyazaki; M. Sakuraba; J. Murota
IEICE TRANSACTIONS on Electronics, May 2013, E96-C(5):680-685

Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer
Kuniaki Hashimoto; Akio Ohta; Hideki Murakami; Seiichiro Higashi; Seiichi Miyazaki
IEICE TRANSACTIONS ON ELECTRONICS, May 2013, E96C(5):674 - 679, Refereed

Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System
Motoki Fukusima; Akio Ohta; Katsunori Makihara; Seiichi Miyazaki
IEICE TRANSACTIONS ON ELECTRONICS, May 2013, E96C(5):708 - 713, Refereed

XPS Study of Energy Band Alignment between Hf-La Oxides and Si(100)
A. Ohta; H. Murakami; S. Higashi; S. Miyazaki
Transactions of the Materials Research Society of Japan, Apr. 2013, 38(3):353-357, Refereed

High thermal stability of abrupt SiO2/GaN interface with low interface state density
N. Truyen; N. Taoka; A. Ohta; K. Makihara; H. Yamada; T. Takahashi; M. Ikeda; M. Shimizu; S. Miyazaki
Japanese Journal of Applied Physics, Mar. 2013, 57(4S):04FG11

Determination of Energy Band Alignment in Ultrathin Hf-based Oxide/Pt System
A. Ohta; H. Murakami; S. Higashi; S. Miyazaki
15TH INTERNATIONAL CONFERENCE ON THIN FILMS (ICTF-15), 2013, 417(1):012012(6pages), Refereed

Characterization of Ultrathin Ta-oxide Films Formed on Ge(100) by ALD and Layer-by-Layer Methods
K. Mishima; H. Murakami; A. Ohta; S. K. Sahari; T. Fujioka; S. Higashi; S. Miyazaki
15TH INTERNATIONAL CONFERENCE ON THIN FILMS (ICTF-15), 2013, 417(1):012013, Refereed

Kinetics of thermally oxidation of Ge(100) surface
S. K. Sahari; A. Ohta; M. Matsui; K. Mishima; H. Murakami; S. Higashi; S. Miyazaki
Journal of Physics: Conference Series, 2013, 417(1):012014(6pages), Refereed

Evaluation of Chemical Bonding Features and Resistance Switching Behaviors of Ultrathin Si Oxide Dielectric Sandwiched Between Pt Electrodes
Akio Ohta; Yuta Goto; Shingo Nishigaki; Hideki Murakami; Seiichiro Higashi; Seiichi Miyazaki
JAPANESE JOURNAL OF APPLIED PHYSICS, Jun. 2012, 51(6):06FF02, Refereed

Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering
Akio Ohta; Yuta Goto; Shingo Nishigaki; Guobin Wei; Hideki Murakami; Seiichiro Higashi; Seiichi Miyazaki
IEICE TRANSACTIONS ON ELECTRONICS, May 2012, E95C(5):879 - 884, Refereed

Layer transfer and simultaneous activation of phosphorus atoms in silicon films by near-infrared semiconductor diode laser irradiation
Yoshitaka Kobayashi; Kohei Sakaike; Shogo Nakamura; Mitsuhisa Ikeda; Akio Ohta; Seiichiro Higashi
Materials Research Society Symposium Proceedings, 2012, 1426:275 - 280, Refereed

Control of Schottky Barrier Height at Al/p-Ge Junctions by Ultrathin Layer Insertion
A. Ohta; M. Matsui; H. Murakami; S. Higashi; S. Miyazaki
SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES, 2012, 50(9):449 - 457, Refereed

Characterization of Resistance-Switching Properties of SiOx Films Using Pt Nanodots Electrodes
Katsunori Makihara; Motoki Fukushima; Akio Ohta; Mitsuhisa Ikeda; Seiichi Miyazaki
SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES, 2012, 50(9):459 - 464, Refereed

X-ray Photoelectron Spectroscopy Study of Interfacial Reactions between Metal and Ultrathin Ge Oxide
Akio Ohta; Tomohiro Fujioka; Hideki Murakami; Seiichiro Higashi; Seiichi Miyazaki
JAPANESE JOURNAL OF APPLIED PHYSICS, Oct. 2011, 50(10):10PE01, Refereed

Evaluation of Chemical Structure and Resistance Switching Characteristics of Undoped Titanium Oxide and Titanium-Yttrium Mixed Oxide
Akio Ohta; Yuta Goto; Guobin Wei; Hideki Murakami; Seiichiro Higashi; Seiichi Miyazaki
JAPANESE JOURNAL OF APPLIED PHYSICS, Oct. 2011, 50(10):10PH02, Refereed

Characterization of chemical bonding features at metal/GeO2 Interfaces by X-ray photoelectron spectroscopy
Masafumi Matsui; Hideki Murakami; Tomohiro Fujioka; Akio Ohta; Seiichiro Higashi; Seiichi Miyazaki
MICROELECTRONIC ENGINEERING, Jul. 2011, 88(7):1549 - 1552, Refereed

Impact of insertion of ultrathin TaOx, layer at the Pt/TiO2 interface on resistive switching characteristics
Guobin Wei; Hideki Murakami; Tomohiro Fujioka; Akio Ohta; Yuta Goto; Seiichiro Higashi; Seiichi Miyazaki
MICROELECTRONIC ENGINEERING, Jul. 2011, 88(7):1152 - 1154, Refereed

The Impact of Y Addition into TiO2 on Electronic States and Resistive Switching Characteristics
Akio Ohta; Yuta Goto; Mohd Fairuz Kazalman; Guobin Wei; Hideki Murakami; Seiichiro Higashi; Seiichi Miyazaki
JAPANESE JOURNAL OF APPLIED PHYSICS, Jun. 2011, 50(6):06GG01, Refereed

High-density formation of Ge quantum dots on SiO2
Katsunori Makihara; Mitsuhisa Ikeda; Akio Ohta; Shotaro Takeuchi; Yosuke Shimura; Shigeaki Zaima; Seiichi Miyazaki
SOLID-STATE ELECTRONICS, Jun. 2011, 60(1):65 - 69, Refereed

Impact of Annealing Ambience on Resistive Switching in Pt/TiO2/Pt Structure
Guobin Wei; Yuta Goto; Akio Ohta; Katsunori Makihara; Hideki Murakami; Seiichiro Higashi; Seiichi Miyazaki
IEICE TRANSACTIONS ON ELECTRONICS, May 2011, E94C(5):699 - 704, Refereed

Activation of As Atoms in Ultrashallow Junction during Milli- and Microsecond Annealing Induced by Thermal-Plasma-Jet Irradiation
Kazuya Matsumoto; Akio Ohta; Seiichi Miyazaki; Seiichiro Higashi
JAPANESE JOURNAL OF APPLIED PHYSICS, Apr. 2011, 50(4):04DA07, Refereed

Native Oxidation Growth on Ge(111) and (100) Surfaces
Siti Kudnie Sahari; Hideki Murakami; Tomohiro Fujioka; Tatsuya Bando; Akio Ohta; Katsunori Makihara; Seiichiro Higashi; Seiichi Miyazaki
JAPANESE JOURNAL OF APPLIED PHYSICS, Apr. 2011, 50(4):04DA12, Refereed

Characterization of Mg diffusion into HfO2/SiO 2/Si(100) stacked structures and its impact on detect state densities
Akio Ohta; Daisuke Kanme; Hideki Murakami; Seiichiro Higashi; Seiichi Miyazaki
IEICE Transactions on Electronics, 2011, E94-C(5):717 - 723, Refereed

Electron and hole components of tunneling currents through an interfacial oxide-high-k gate stack in metal-oxide-semiconductor capacitors
Fatimah A. Noor; Mikrajuddin Abdullah; Sukirno; Khairurrijal; Akio Ohta; Seiichi Miyazaki
JOURNAL OF APPLIED PHYSICS, Nov. 2010, 108(9):093711, Refereed

Contribution of Carbon to Growth of Boron-Containing Cluster in Heavily Boron-Doped Silicon
Hiroshi Itokawa; Akio Ohta; Mitsuhisa Ikeda; Ichiro Mizushima; Seiichi Miyazaki
JAPANESE JOURNAL OF APPLIED PHYSICS, Aug. 2010, 49(8):081301, Refereed

Self-Align Formation of Si Quantum Dots
K. Makihara; M. Ikeda; H. Deki; A. Ohta; S. Miyazaki
SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES, 2010, 33(6):661 - 667, Refereed

Characterization of Interfaces between Chemically Cleaned or Thermally Oxidized Germanium and Metals
Hideki Murakami; Tomohiro Fujioka; Akio Ohta; Tatsuya Bando; Seiichiro Higashi; Seiichi Miyazaki
SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES, 2010, 33(6):253 - 262, Refereed

Characterization of interfacial reaction and chemical bonding features of LaOx/HfO2 stack structure formed on thermally-grown SiO2/Si(100)
Akio Ohta; Daisuke Kanme; Hideki Murakami; Seiichiro Higashi; Seiichi Miyazaki
MICROELECTRONIC ENGINEERING, Jul. 2009, 86(7-9):1650 - 1653, Refereed

Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique
K. Makihara; K. Shimanoe; M. Ikeda; A. Ohta; S. Higashi; S. Miyazaki
Transactions of Materials Research Society of Japan, Jun. 2009, 34(2):309-312 - 312, Refereed

Photoemission study of fully silicided Pd2Si gates with interface modification induced by dopants
Takuji Hosoi; Akio Ohta; Seiichi Miyazaki; Hiroyuki Shiraishi; Kentaro Shibahara
Applied Physics Letters, 2009, 94(19):192102, Refereed

Surface potential changes induced by physisorption of Si-tagged protein A on HF-last Si(100) and thermally grown SiO2 surfaces
S. Mahboob; K. Makihara; A. Ohta; S. Higashi; Y. Hata; A. Kuroda; S. Miyazaki
ECS Transactions, 2009, 19(22):35 - 43, Refereed

The influence of defects and impurities on electrical properties of high high - k diele dielectrics trics
J. Da̧browski; S. Miyazaki; S. Inumiya; G. Kozłowski; G. Lippert; G. Łu-Pina; Y. Nara; H. J. Müssig; A. Ohta; Y. Pei
Materials Science Forum, 2009, 608:55 - 109, Refereed

Interface properties and effective work function of Sb-predoped fully silicided NiSi gate
Takuji Hosoi; Kosuke Sano; Akio Ohta; Katsunori Makihara; Hirotaka Kaku; Seiichi Miyazaki; Kentaro Shibahara
SURFACE AND INTERFACE ANALYSIS, Jun. 2008, 40(6-7):1126 - 1130, Refereed

Theoretical investigation of metal/dielectric interfaces-breakdown of schottky barrier limits
Kenji Shiraishi; Takashi Nakayama; Takashi Nakaoka; Akio Ohta; Seiichi Miyazaki
ECS Transactions, 2008, 13(2):21 - 27, Refereed

Photoemission study of Metal/HfSiON gate stack
S. Miyazaki; H. Yoshinaga; A. Ohta; Y. Akasaka; K. Shiraishi; K. Yamada; S. Inumiya; M. Kadoshima; Y. Nara
ECS Transactions, 2008, 13(2):67 - 73, Refereed

Performance improvement of HfAlOxN n-channel metal-oxide-semiconductor field-effect transistors by controlling the bonding configuration of nitrogen atoms coordinated to Hf atoms
Kunihiko Iwamoto; Tomoaki Nishimura; Akio Ohta; Koji Tominaga; Toshihide Nabatame; Seiichi Miyazaki; Akira Toriumi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Dec. 2007, 46(12):7666 - 7670, Refereed

Characterization of chemical bonding features and defect state density in HfSiOxNy/SiO2 gate stack
A. Ohta; Y. Munetaka; A. Tsugou; K. Makihara; H. Murakami; S. Higashi; S. Miyazaki; S. Inumiya; Y. Nara
Microelectronic Engineering, Oct. 2007, 84(9-10):169-180, Refereed

Theoretical studies on metal/high-k gate stacks
Kenji Shiraishi; Yasushi Akasaka; Genji Nakamura; Takashi Nakayama; Seiichi Miyazaki; Heiji Watanabe; Akio Ohta; Kenji Ohmori; Toyohiro Chikyow; Yasuo Nara; Kikuo Yamabe; Keisaku Yamada
ECS Transactions, 2007, 6(1):191 - 204, Refereed

Theoretical studies on fermi level pining of Hf-based high-k gate stacks based on thermodynamics
K. Shiraishi; Y. Akasaka; G. Nakamura; M. Kadoshima; H. Watanabe; A. Ohta; S. Miyazaki; K. Ohmori; T. Chikyow; K. Yamabe; Y. Nara; Y. Ohji; K. Yamada
ECS Transactions, 2007, 11(4):125 - 133, Refereed

Improvement in fermi-level pinning of p-MOS metal gate electrodes on HfSiON by employing Ru gate electrodes
M. Kadoshima; Y. Sugita; K. Shiraishi; H. Watanabe; A. Ohta; S. Miyazaki; K. Nakajima; T. Chikyow; K. Yamada; T. Aminaka; E. Kurosawa; T. Matsuki; T. Aoyama; Y. Nara; Y. Ohji
ECS Transactions, 2007, 11(4):169 - 180, Refereed

Photoemission study of ultrathin GeO2/Ge heterostructures formed by UV-O3 oxidation
Akio Ohta; Hiroshi Nakagawa; Hideki Murakami; Seiichirou Higashi; Seiichi Miyazaki
e-Journal of Surface Science and Nanotechnology, 10 Feb. 2006, 4:174 - 179, Refereed

Photoemission study of ultrathin HfSiON/Si(100) systems
A. Ohta; H. Nakagawa; H. Murakami; S. Higashi; S. Miyazaki; S. Inumiya; Y. Nara
Transactions of the Materials Research Society of Japan, Vol 31, No 1, 2006, 31(1):125 - 128, Refereed

Characterization of FUSI-PtSi formed on ultrathin HfO2/Si(100) by photoelectron spectroscopy
Y. Munetaka; F. Takeno; A. Ohta; H. Murakami; S. Higashi; S. Miyazaki; M. Kadoshima; T. Nabatame
Transactions of the Materials Research Society of Japan, Vol 31, No 1, 2006, 31(1):145 - 148, Refereed

Influence of thermal annealing on defect states and chemical structures in ultrathin Al2O3/SiNx/poly-Si
M. Taira; A. Ohta; H. Nakagawa; S. Miyazaki; K. Komeda; M. Horikawa; K. Koyama
Transactions of the Materials Research Society of Japan, Vol 31, No 1, 2006, 31(1):149 - 152, Refereed

Nitridation of Ge(100) surfaces by vacuum-ultra violet (VUV) irradiation in NH3 ambience
H. Nakagawa; A. Ohta; M. Taira; H. Abe; H. Murakami; S. Higashi; S. Miyazaki
Transactions of the Materials Research Society of Japan, Vol 31, No 1, 2006, 31(1):153 - 156, Refereed

Impact of nitrogen incorporation into yttrium oxide on chemical bonding features and electrical properties
Hiroyuki Abe; Hiroshi Nakagawa; Masahiro Taira; Akio Ohta; Seiichiro Higashi; Seiichi Miyazaki
Transactions of the Materials Research Society of Japan, Vol 31, No 1, 2006, 31(1):157 - 160, Refereed

Depth profiling of chemical and electronic structures and defects of ultrathin HfSiON on Si(100)
S. Miyazaki; A. Ohta; S. Inumiya; Y. Nara; K. Yamada
ECS Transactions, 2006, 3(3):171 - 180, Refereed

Physics of metal/high-k interfaces
Takashi Nakayama; Kenji Shiraishi; Seiichi Miyazaki; Yasushi Akasaka; Takashi Nakaoka; Kazuyoshi Torii; Akio Ohta; Parhat Ahmet; Kenji Ohmori; Naoto Umezawa; Heiji Watanabe; Toyohiro Chikyow; Yasuo Nara; Hiroshi Iwai; Keisaku Yamada
ECS Transactions, 2006, 3(3):129 - 140, Refereed

Characterization of Sb-Doped Fully-Silicided NiSi/SiO2/Si MOS Structure
T. Hosoi; K. Sano; M. Hino; A. Ohta; K. Mikihara; H. Kaku; S. Miyazaki; K. Shibahara
Abstracts of 2005 International Semiconductor Device Research Symposium (ISDRS2005, Bethesda, Maryland, USA), Dec. 2005, Refereed

Analysis of Leakage Current through Al/HfAlOx/SiONx/Si(100) MOS Capacitors
S. Nagamachi; A. Ohta; F. Takeno; H. Nakagawa; H. Murakami; S. Miyazaki; T. Kawahara; K. Torii
Transactions of the Materials Research Society of Japan, Mar. 2005, 30(1):197-200, Refereed

Impact of Rapid Thermal Anneal on ALCVD-Al2O3/Si3N4/Si(100) Stack Structures -Photoelectron Spectroscopy
F. Takeno; A. Ohta; S. Miyazaki; K. Komeda; M. Horikawa; K. Koyama
Transactions of the Materials Research Society of Japan, Mar. 2005, 30(1):213-217, Refereed

Impact of rapid thermal O-2 anneal on dielectric stack structures of hafnium aluminate and silicon dioxide formed on Si(100)
A Ohta; H Nakagawa; H Murakami; S Higashi; T Kawahara; K Torii; S Miyazaki
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Nov. 2004, 43(11B):7831 - 7836, Refereed

Characterization of interfacial oxide layers in heterostructures of hafnium oxides formed on NH3-nitrided Si(100)
H Nakagawa; A Ohta; F Takeno; S Nagamachi; H Murakami; S Higashi; S Miyazaki
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Nov. 2004, 43(11B):7890 - 7894, Refereed

Photoelectron spectroscopy of ultrathin yttrium oxide films on Si(100)
A Ohta; M Yamaoka; S Miyazaki
MICROELECTRONIC ENGINEERING, Apr. 2004, 72(1-4):154 - 159, Refereed

絶縁性基板上のゲルマニウム二次元結晶の創製と電子物性の解明 (代表)
日本学術振興会, 科学研究費助成事業, 基盤研究(B)
Apr. 2019 - Present

ゲルマニウム系二次元ハニカム結晶の自己組織化形成と結晶構造・電子状態制御 (代表)
科学研究費助成事業, 挑戦的研究（萌芽）
Jun. 2018 - Present

Si-Ge系スーパーアトム構造のセルフアライン集積による光・電子物性制御 (分担)
日本学術振興会, 科学研究費助成事業, 基盤研究(S)
Jul. 2015 - Mar. 2019

Si系酸化薄膜抵抗変化材料における欠陥分布の高感度計測および精密制御 (代表)
日本学術振興会, 科学研究費助成事業, 若手研究(A)
Apr. 2015 - Mar. 2018

シリコン系二次元ハニカム結晶の創製と電子物性の解明 (代表)
日本学術振興会, 科学研究費助成事業, 挑戦的萌芽研究
Apr. 2015 - Mar. 2017

磁性合金ナノドットハイブリッド集積によるスピン物性制御と新機能メモリ応用 (分担)
日本学術振興会, 科学研究費助成事業, 基盤研究(A)
Apr. 2015 - Jun. 2015

シリコン酸化薄膜を用いた微細抵抗変化型メモリの研究 (代表)
日本学術振興会, 科学研究費助成事業, 若手研究(B)
Apr. 2013 - Mar. 2015

Ti系酸化膜を用いた抵抗変化型メモリの化学結合状態と抵抗変化現象の相関の解明 (代表)
日本学術振興会, 科学研究費助成事業, 若手研究(スタートアップ)
Apr. 2009 - Mar. 2011

次世代MOSトランジスタ用Hf系高誘電率ゲート絶縁膜の研究
日本学術振興会, 科学研究費助成事業, 特別研究員奨励費
Apr. 2007 - Mar. 2009