The √7×√3-In surface reconstruction consisting of triple layer on the Si(111) surface
Takayuki Suzuki; Kazuma Yagyu
Surface Science, 03 Dec. 2023, 741:122434 - 122434, Refereed
Lead

Formation of the incommensurate Si(111)-∼5.4 × ∼5.4-In surface
Takayuki Suzuki; Kazuma Yagyu
Surface Science, 27 Aug. 2022, 726:122174 - 122174, Refereed
Lead

Hydrogen etching of the SiC(0001) surface at moderate temperature
Toshiya Hamasaki; Kazuma Yagyu; Hisashi Mitani; Takashi Nishida; Hiroshi Tochihara; Takayuki Suzuki
Journal of Vacuum Science & Technology B, 30 Jul. 2021, 39(5):052801-1 - 052801-6, Refereed

Microscopic Hopping Mechanism of Isolated PTCDA Molecule on Reactive Ge(001)
T. Shiota; W. Mizukami; H. Tochihara; K. Yagyu; T. Suzuki; Y. Aoki
The Journal of Physical Chemistry C, 29 Oct. 2020, 124:24704 - 24712, Refereed

Initial growth of pentacene on a Si(111)-√7×√3-In surface
T. Suzuki; K. Yagyu; H. Tochihara
Physical Chemistry Chemical Physics, 24 Jun. 2020, 22:14748 - 14755, Refereed
Lead

Surface structural phase transition induced by the formation of metal-organic networks on the Si(111)-√7×√3 -In surface
T. Suzuki; J. Lawrence; J.M. Morbec; P. Kratzer; G. Costantini
Nanoscale, Nov. 2019, 11:21790 - 21798, Refereed
Lead

Self-ordering of chemisorbed PTCDA molecules on Ge(001) driven by repulsive forces
P. Kocán; B. Pieczyrak; L. Jurczyszyn; Y. Yoshimoto; K. Yagyu; H. Tochihara; T. Suzuki
Physical Chemistry Chemical Physics, 15 Apr. 2019, 21:9504 - 9511, Refereed

Initial Growth of Pentacene Thin Film on Si(001) substrate
T. Suzuki; K. Yagyu; H. Tochihara
The Journal of Physical Chemistry C, 29 Jan. 2019, 123:2996 - 3003, Refereed
Lead

Indium coverage of the Si(111)-√7×√3-In surface
T. Suzuki; J. Lawrence; M. Walker; J. M. Morbec; P. Blowey; K. Yagyu; P. Kratzer; G. Costantini
PHYSICAL REVIEW B, Jul. 2017, 96(3):035412-1 - 035412-7, Refereed
Lead

Theoretical Study of Cu Intercalation through a Defect in Zero-Layer Graphene on SiC Surface
Yuuichi Orimoto; Kohei Otsuka; Kazuma Yagyu; Hiroshi Tochihara; Takayuki Suzuki; Yuriko Aoki
JOURNAL OF PHYSICAL CHEMISTRY C, Apr. 2017, 121(13):7294 - 7302, Refereed

Neutralization of an epitaxial graphene grown on a SiC(0001) by means of palladium intercalation
Kazuma Yagyu; Kazutoshi Takahashi; Hiroshi Tochihara; Hajime Tomokage; Takayuki Suzuki
APPLIED PHYSICS LETTERS, Mar. 2017, 110(13):131602-1 - 5, Refereed

Adsorption of PTCDA on Ge(001)
P. Kocan; Y. Yoshimoto; K. Yagyu; H. Tochihara; T. Suzuki
JOURNAL OF PHYSICAL CHEMISTRY C, Feb. 2017, 121(6):3320 - 3326, Refereed

Chlorine adlayer-templated growth of a hybrid inorganic–organic layered structure on Au(111)
I. I. Rzeznicka; H. Horino; K. Yagyu; T. Suzuki; S. Kajimoto; H. Fukumura
SURFACE SCIENCE, Oct. 2016, 652:46 - 50, Refereed

Adsorption of PTCDA on Si(001)-2×1 surface
Takayuki Suzuki; Yoshihide Yoshimoto; Kazuma Yagyu; Hiroshi Tochihara
JOURNAL OF CHEMICAL PHYSICS, Mar. 2015, 142(10):101904 - 1-7, Refereed
Lead

SiC(0001)基板に成長させたゼロ層グラフェンへの銅インターカレーション
柳生数馬; 田尻恭之; 香野淳; 高橋和敏; 栃原浩; 友景肇; 鈴木孝将
真空, Jul. 2014, 57(7):266 - 271, Refereed

Fabrication of a single layer graphene by copper intercalation on a SiC(0001) surface
Kazuma Yagyu; Takayuki Tajiri; Atsushi Kohno; Kazutoshi Takahashi; Hiroshi Tochihara; Hajime Tomokage; Takayuki Suzuki
APPLIED PHYSICS LETTERS, Feb. 2014, 104(5):053115 - 1-4

Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC(000(1)over-bar) surfaces
Hiroshi Tochihara; Tetsuroh Shirasawa; Takayuki Suzuki; Toshio Miyamachi; Takashi Kajiwara; Kazuma Yagyu; Shunsuke Yoshizawa; Toshio Takahashi; Satoru Tanaka; Fumio Komori
APPLIED PHYSICS LETTERS, Feb. 2014, 104(5):051601 - 1-4

Surface morphology of MnSi thin films grown on Si(111)
T. Suzuki; T. Lutz; B. Geisler; P. Kratzer; K. Kern; G. Costantini
Surface Science, Nov. 2013, 617:106 - 112, Refereed
Lead

Growth mode and atomic structure of MnSi thin films on Si(111)
B. Geisler; P. Kratzer; T. Suzuki; T. Lutz; G. Costantini; K. Kern
PHYSICAL REVIEW B, Sep. 2012, 86(11):1154728, Refereed

電子定在波とフリーデル振動
長谷川幸雄; 小野雅紀; 鈴木孝将; 江口豊明
日本物理学会誌, Jan. 2012, 67(1):6 - 13, Refereed

Terephthalic acid (TPA) on Si(111)-α and β-(√3×√3)-Bi surfaces: Effect of Bi coverage
T. Suzuki; T. Lutz; G. Costantini; K. Kern
SURFACE SCIENCE, Dec. 2011, 605(23-24):1994 - 1998, Refereed
Lead

Electronic decoupling of an epitaxial graphene monolayer by gold intercalation
Isabella Gierz; Takayuki Suzuki; R. Thomas Weitz; Dong Su Lee; Benjamin Krauss; Christian Riedl; Ulrich Starke; Hartmut Hoechst; Jurgen H. Smet; Christian R. Ast; Klaus Kern
PHYSICAL REVIEW B, Jun. 2010, 81(23):235408 - 1-6, Refereed

Reversing the shape transition of InAs/GaAs (001) quantum dots by etching-induced lateral In segregation
T. Lutz; T. Suzuki; G. Costantini; L. Wang; S. Kiravittaya; A. Rastelli; O. G. Schmidt; K. Kern
PHYSICAL REVIEW B, May 2010, 81(20):205414 - 1-4, Refereed

Silicon Surface with Giant Spin Splitting
I. Gierz; T. Suzuki; E. Frantzeskakis; S. Pons; S. Ostanin; A. Ernst; J. Henk; M. Grioni; K. Kern; C. R. Ast
PHYSICAL REVIEW LETTERS, Jul. 2009, 103(4):046803 - 1-4, Refereed

Substrate effect on supramolecular self-assembly: from semiconductors to metals
Takayuki Suzuki; Theresa Lutz; Dietmar Payer; Nian Lin; Steven L. Tait; Giovanni Costantini; Klaus Kern
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2009, 11(30):6498 - 6504, Refereed
Lead

Change of InAs/GaAs quantum dot shape and composition during capping
H. Eisele; A. Lenz; R. Heitz; R. Timm; M. Daehne; Y. Temko; T. Suzuki; K. Jacobi
JOURNAL OF APPLIED PHYSICS, Dec. 2008, 104(12):124301 - 1-5, Refereed

"The Chemisorption of Pentacene on Si(001)-2×1"
T. Suzuki; D. C. Sorescu; J. T. Yates
SURFACE SCIENCE, Dec. 2006, 600(23):5092 - 5103, Refereed
Lead

"Charge Transport Through A Single Molecule of Dibenzo [a,j]coronene on Si(001)-2×1: Possible Coulomb Blockade"
T. Suzuki
e-J. Surface Science & Nanotechnology, Aug. 2006, 4:588 - 592, Refereed
Lead

"The Chemisorption of Dibenzo[a,j]coronene on Si(001)-2×1"
T. Suzuki; D. C. Sorescu; K. D. Jordan; J. T. Yates
JOURNAL OF CHEMICAL PHYSICS, Jun. 2006, 124(22):224708 - 1-8, Refereed
Lead

"The Chemisorption of Coronene on Si(001)-2×1"
T Suzuki; DC Sorescu; KD Jordan; J Levy; JT Yates
JOURNAL OF CHEMICAL PHYSICS, Feb. 2006, 124(5):054701 - 1-6, Refereed
Lead

"Formation of Carbon-induced Dimer Vacancy Defects on Si(001)-2×1 by Thermal Decomposition of Organic Molecules-Lack of Dependence on the Molecules’ Structure"
T Suzuki; P Maksymovych; J Levy; JT Yates
SURFACE SCIENCE, Jan. 2006, 600(2):366 - 369, Refereed
Lead

"Localized Deposition of Coronene Molecules on Si(001)-2×1 Using an STM Tip Source"
T Suzuki; J Levy; JT Yates
NANO LETTERS, Jan. 2006, 6(1):138 - 143, Refereed
Lead

The atomic structure of InAs quantum dots on GaAs(112)A
T Suzuki; Y Temko; MC Xu; K Jacobi
SURFACE SCIENCE, Dec. 2005, 595(1-3):194 - 202, Refereed
Lead

Molecular-beam-epitaxy grown InAs islands on nominal and vicinal GaAs(2511)A surfaces
Y Temko; T Suzuki; MC Xu; K Jacobi
SURFACE SCIENCE, Oct. 2005, 591(1-3):117 - 132, Refereed

Shape transition of InAs quantum dots on GaAs(001)
MC Xu; Y Temko; T Suzuki; K Jacobi
JOURNAL OF APPLIED PHYSICS, Oct. 2005, 98(8):083525 - 1-8, Refereed

On the location of InAs quantum dots on GaAs(001)
MC Xu; Y Temko; T Suzuki; K Jacobi
SURFACE SCIENCE, Sep. 2005, 589(1-3):91 - 97, Refereed

InAs wetting layer evolution on GaAs(001)
MC Xu; Y Temko; T Suzuki; K Jacobi
SURFACE SCIENCE, Apr. 2005, 580(1-3):30 - 38, Refereed

Evolution of InAs quantum dot shape on GaAs((114)over-bar)B
MC Xu; Y Temko; T Suzuki; K Jacobi
SURFACE SCIENCE, Feb. 2005, 576(1-3):89 - 97, Refereed

Shape transition of self-assembled InAs quantum dots on GaAs(114)A
MC Xu; Y Temko; T Suzuki; K Jacobi
PHYSICAL REVIEW B, Feb. 2005, 71(7):075314 - 1-8, Refereed

InAs quantum dots on GaAs((25)over-bar1(1)over-bar)B: STM and photoluminescence studies
Y Temko; T Suzuki; MC Xu; K Potschke; D Bimberg; K Jacobi
PHYSICAL REVIEW B, Jan. 2005, 71(4):045336 - 1-11, Refereed

Structure of the GaAs((1)over-bar(1)over-bar(2)over-bar)B surface
T Suzuki; Y Temko; MC Xu; K Jacobi
SURFACE SCIENCE, Dec. 2004, 573(3):457 - 463, Refereed
Lead

InAs quantum dots on GaAs((1)over-bar(1)over-bar(2)over-bar)B
T Suzuki; Y Temko; MC Xu; K Jacobi
JOURNAL OF APPLIED PHYSICS, Dec. 2004, 96(11):6398 - 6404, Refereed
Lead

Lattice defects in InAs quantum dots on the GaAs(315)over-barB surface
T Suzuki; Y Temko; MC Xu; K Jacobi
PHYSICAL REVIEW B, Jun. 2004, 69(23):235302 - 1-6, Refereed
Lead

Mature InAs quantum dots on the GaAs(114)A surface
MC Xu; Y Temko; T Suzuki; K Jacobi
APPLIED PHYSICS LETTERS, Mar. 2004, 84(13):2283 - 2285, Refereed

Surface morphology and structure of the bare and InAs-covered GaAs(315)B surface
T Suzuki; Y Temko; MC Xu; K Jacobi
SURFACE SCIENCE, Jan. 2004, 548(1-3):333 - 341, Refereed
Lead

InAs quantum dots on the GaAs((5)over-bar (2)over-bar (11)over-bar)B surface
Y Temko; T Suzuki; MC Xu; K Jacobi
APPLIED PHYSICS LETTERS, Nov. 2003, 83(18):3680 - 3682, Refereed

InAs quantum dots grown on the GaAs(113)A and GaAs((1)over-bar(1)over-bar(1)over-bar)B surfaces: A comparative STM study
Y Temko; T Suzuki; P Kratzer; K Jacobi
PHYSICAL REVIEW B, Oct. 2003, 68(16):165310 - 1-12, Refereed

Shape and growth of InAs quantum dots on GaAs(113)A
Y Temko; T Suzuki; K Jacobi
APPLIED PHYSICS LETTERS, Mar. 2003, 82(13):2142 - 2144, Refereed

Shape, size, and number density of InAs quantum dots grown on the GaAs((1)over-bar(1)over-bar(3)over-bar)B surface at various temperatures
T Suzuki; Y Temko; K Jacobi
PHYSICAL REVIEW B, Jan. 2003, 67(4):045315 - 1-7, Refereed
Lead

Modification of electron density in surface states: Scanning tunnelling microscopy observation of standing waves on Pd overlayers
Y. Hasegawa; Takayuki Suzuki; M. Ono; E. Ishikawa; A. Kamoshida; N. Matsuura; T. Eguchi
Nanotechnology, Dec. 2002, 13(6):710 - 713, Refereed

Modification of electron density in surface states: standing wave observation on Pd overlayers by STM
Y Hasegawa; T Suzuki; T Sakurai
SURFACE SCIENCE, Aug. 2002, 514(1-3):84 - 88, Refereed

Step structure on the GaAs(2511) surface
Y Temko; L Geelhaar; T Suzuki; K Jacobi
SURFACE SCIENCE, Jul. 2002, 513(2):328 - 342, Refereed

Growth nuclei and surface defects on GaAs((1)over-bar(1)over-bar(3)over-bar)B
T Suzuki; Y Temko; K Jacobi
SURFACE SCIENCE, Jun. 2002, 511(1-3):13 - 22, Refereed
Lead

Shape of InAs quantum dots grown on the GaAs ((113)over-bar) B surface
T Suzuki; Y Temko; K Jacobi
APPLIED PHYSICS LETTERS, Jun. 2002, 80(25):4744 - 4746, Refereed
Lead

Single- and triple-height-step distributions on Si(111) vicinal surfaces inclined toward [(1)over-bar(1)over-bar-2] studied by reflection electron microscopy
T Suzuki; H Minoda; Y Tanishiro; K Yagi
SURFACE SCIENCE, Jan. 2002, 496(3):179 - 186, Refereed
Lead

High resolution REM studies of Si(5512) surfaces and their roughening phase transition
Y Peng; T Suzuki; H Minoda; Y Tanishiro; K Yagi
SURFACE SCIENCE, Nov. 2001, 493(1-3):499 - 507, Refereed

Electron standing-wave observation in the Pd overlayer on Au(111) and Cu(111) surfaces by scanning tunneling microscopy
T Suzuki; Y Hasegawa; ZQ Li; K Ohno; Y Kawazoe; T Sakurai
PHYSICAL REVIEW B, Aug. 2001, 64(8):081403(R) - 1-4, Refereed
Lead

Energy-filtered electron interferometry in reflection electron microscopy
T Suzuki; Y Tanishiro; N Ishiguro; H Minoda; K Yagi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Apr. 2001, 40(4A):2527 - 2532, Refereed
Lead

Energy filtering in UHV reflection electron microscopy
Y Tanishiro; T Suzuki; N Ishiguro; H Minoda; K Yagi
MICROBEAM ANALYSIS 2000, PROCEEDINGS, 2000, (165):215 - 216, Refereed

REM STUDIES OF STEP CREATION ENERGIES AND STEP–STEP INTERACTIONS ON Si(111) AND (110) VICINAL SURFACES
T. SUZUKI; H. MINODA; Y. TANISHIRO; K. YAGI
Surface Review and Letters, Dec. 1999, 06(06):985 - 994

Image Conservation in Inelastically Scattered Electrons in Reflection Electron Microscopy
Yasumasa Tanishiro; Kimiharu Okamoto; Takayuki Suzuki; Nami Ishiguro; Hiroki Mimoda; Hidetoshi Miura; Katsumichi Yagi; Masaki Takeguchi
Japanese Journal of Applied Physics, 01 Nov. 1999, 38(11R):6540 - 6540

TED analysis of the Si(113) surface structure
T. Suzuki; H. Minoda; Y. Tanishiro; K. Yagi
Surface Science, Sep. 1999, 438(1-3):76 - 82

REM studies of the roughening transitions of Si high index surfaces
T. Suzuki; H. Minoda; Y. Tanishiro; K. Yagi
Thin Solid Films, Apr. 1999, 343-344:423 - 426

Design features of a new ultra-high vacuum electron microscope with an omega filter
Y. Tanishiro; K. Okamoto; M. Takeguchi; H. Minoda; T. Suzuki; K. Yagi
Journal of Electron Microscopy, 01 Jan. 1999, 48(6):837 - 842

“Si微斜面での通電効果と表面形態”
八木克道; 出川雅士; 西村穂積; 鈴木孝将; 箕田弘喜; 谷城康眞
表面科学, 1999, 20(12):830 - 836, Refereed

“反射電子顕微鏡で見たSi高指数面と微斜面”
鈴木孝将; 八木克道
日本結晶学会誌, 1999, 41:335 - 341, Refereed
Lead

Au adsorption induced faceting and phase transitions of facet planes on the Si[110] zone studied by UHV-REM
Koyu Aoki; Takayuki Suzuki; Hiroki Minoda; Yasumasa Tanishiro; Katsumichi Yagi
Surface Science, Jun. 1998, 408(1-3):101 - 111

TED Study of Si(113) Surfaces
T. Suzuki; H. Minoda; Y. Tanishiro; K. Yagi
Surface Review and Letters, Feb. 1998, 05(01):249 - 254

REM STUDY OF THE Si(111) VICINAL SURFACES
T. SUZUKI; K. YAGI
Surface Review and Letters, Jun. 1997, 04(03):543 - 549

STM studies of Si(hhm) surface with = 1.4–1.5
T. Suzuki; H. Minoda; Y. Tanishiro; K. Yagi; H. Kitada; N. Shimizu
Surface Science, Jun. 1996, 357-358:73 - 77

STM studies of Si(5 5 12) 2 × 1 surfaces
T. Suzuki; H. Minoda; Y. Tanishiro; K. Yagi; T. Sueyoshi; T. Sato; M. Iwatsuki
Surface Science, Jun. 1996, 357-358:522 - 526

REM study of high index Si(5 5 12) flat surfaces
T. Suzuki; H. Minoda; Y. Tanishiro; K. Yagi
Surface Science, Mar. 1996, 348(3):335 - 343

REM observations of the birth stage of the flat facets on an inner cylindrical silicon surface
T. Suzuki; J.J. Métois; K. Yagi
Surface Science, Sep. 1995, 339(1-2):105 - 113

Structure of high index clean Si surface studied by REM
T. Suzuki; K. Yagi
Physica Status Solidi (a), 16 Nov. 1994, 146(1):243 - 249

REM observations of Si(5 5 12) surfaces
T SUZUKI; Y TANISHIRO; H MINODA; K YAGI
ELECTRON MICROSCOPY 1994, VOLS 2A AND 2B, 1994, :1033 - 1034, Refereed

REM observations of Si(hhk) surfaces and their vicinal surfaces
Takayuki Suzuki; Yasumasa Tanishiro; Hiroki Minoda; Katsumichi Yagi; Mineharu Suzuki
Surface Science, Dec. 1993, 298(2-3):473 - 477

学術講演会JVSS2024開催報告
Takayuki SUZUKI
Vacuum and Surface Science, 10 Mar. 2025, 68(3):180 - 180

Si(111)-√7×√3-In 表面上の金属有機構造体の形成による表面構造相転移
鈴木孝将; 柳生数馬
Research : 福岡大学総合研究所ニュース&レポート, Sep. 2021, 26(2):79 - 81

令和2年度日本表面真空学会九州支部セミナー開催報告
Takayuki SUZUKI
Vacuum and Surface Science, 10 Mar. 2021, 64(3):141 - 141

令和元年度日本表面真空学会九州支部学術講演会開催報告
Takayuki SUZUKI
Vacuum and Surface Science, 10 Aug. 2019, 62(8):528 - 528

Ge表面上のPTCDA分子の吸着構造に関する研究
鈴木孝将; 柳生数馬
Research : 福岡大学総合研究所ニュース&レポート, Jun. 2018, 23(2):48 - 50

イギリスでの在外研究を終えて
鈴木孝将
Research : 福岡大学総合研究所ニュース&レポート, Mar. 2017, 22(1):8 - 10

22aAJ-7 SiC(0001)表面上に成長したグラフェン膜へのPdインターカレーション
Yagyu K.; Takahashi K.; Tochihara H.; Tomokage H.; Suzuki T.
Meeting Abstracts of the Physical Society of Japan, 2016, 71:2628 - 2628

Si(111)-√7×√3-In表面上へのTCNQ吸着による表面構造相転移
Suzuki T.; Lawrence J.; Blowey P.; Costantini G.
Meeting Abstracts of the Physical Society of Japan, 2016, 71:2379 - 2379

Angle resolved photoemission spectroscopy on Pd intercalated graphenes grown on a SiC(0001) surface
Kazuma Yagyu; Takayuki Suzuki
Activity Report Synchrotron Light Application Center Saga University 2014-2015, 2016, :58 - 59

Si表面上の有機半導体分子の吸着構造に関する研究
鈴木孝将; 友景 肇; 柳生数馬
Research : 福岡大学総合研究所ニュース&レポート, Dec. 2015, 20(4):48 - 50

Angle resolved photoemission spectroscopy on Cu intercalated graphenes grown on a SiC(0001) surface
YAGYU Kazuma; SUZUKI Takayuki
Activity Report Synchrotron Light Application Center 2012-2013, Jun. 2014, :62 - 63

28pPSA-43 Si(001)-2×1表面上のPTCDA分子の吸着構造のSTM観察(28pPSA 領域9ポスターセッション,領域9(表面・界面・結晶成長))
Suzuki T.; Yoshimoto Y.; Yagyu K.; Tochihara H.
Meeting abstracts of the Physical Society of Japan, 05 Mar. 2014, 69(1):887 - 887

28aAQ-2 SiC上エピタキシャルグラフェンに対する銅のインターカレーション(28aAQ グラフェン・シリセン,領域9(表面・界面・結晶成長))
Yagyu K.; Tajiri T.; Kohno A.; Takahashi K.; Tochihara H.; Tomokage H.; Suzuki T.
Meeting abstracts of the Physical Society of Japan, 05 Mar. 2014, 69(1):877 - 877

27pAP-6 SiC上の結晶性シリカシートのSTM観察とそのバンドギャップ(27pAP 表面界面構造,領域9(表面・界面,結晶成長))
Tochihara Hiroshi; Komori Fumio; Kruger Peter; Pollmann Jahannes; Shirasawa Tetsuroh; Suzuki Takayuki; Miyamachi Toshio; Kajiwara Takashi; Yagyu Kazuma; Yoshizawa Shunsuke; Takahashi Toshio; Tanaka Satoru
Meeting Abstracts of the Physical Society of Japan, 2014, 69(0):871 - 871

ドイツとアメリカの研究生活
SUZUKI Takayuki
J. Surf. Sci. Soc. Jpn., 10 Sep. 2013, 34(9):507 - 508

26pPSA-28 SiC(0001)表面上に成長したグラフェン膜へのCu蒸着2(26pPSA 領域9ポスターセッション,領域9(表面・界面,結晶成長))
Yagyu K.; Tomokage H.; Suzuki T.; Tajiri T.; Kohno A.
Meeting abstracts of the Physical Society of Japan, 26 Mar. 2013, 68(1):976 - 976

26pPSA-3 Si(111)-7×7表面上のMnSi薄膜の成長と構造(26pPSA 領域9ポスターセッション,領域9(表面・界面,結晶成長))
Suzuki T.; Geisler B.; Kratzer P.; Lutz T.; Costantini G.; Kern K.
Meeting abstracts of the Physical Society of Japan, 26 Mar. 2013, 68(1):970 - 970

19aEC-3 SiC(0001)表面上に成長したグラフェン膜へのCu蒸着(19aEC 領域7,領域9合同 グラフェン(分光・構造),領域7(分子性固体・有機導体))
Yagyu K.; Tomokage H.; Suzuki T.
Meeting abstracts of the Physical Society of Japan, 24 Aug. 2012, 67(2):768 - 768

26pPSB-29 Si(001)表面上のペンタセン薄膜の初期成長(26pPSB 領域9ポスターセッション,領域9(表面・界面,結晶成長))
Nogata Shunsuke; Tomokage Hajime; Yagyu Kazuma; Suzuki Takayuki
Meeting abstracts of the Physical Society of Japan, 05 Mar. 2012, 67(1):963 - 963

26pPSB-30 SiC(0001)表面における銅蒸着グラフェン膜の研究(26pPSB 領域9ポスターセッション,領域9(表面・界面,結晶成長))
Yagyu K.; Tomokage H.; Suzuki T.
Meeting abstracts of the Physical Society of Japan, 05 Mar. 2012, 67(1):963 - 963

28aXC-7 反射電子顕微鏡法におけるenergy-filtered electron interferometry II
Tanishiro Y.; Suzuki T.; Minoda H.; Yagi K.
Meeting abstracts of the Physical Society of Japan, 09 Mar. 2001, 56(1):852 - 852

24aPS-40 反射電子顕微鏡法におけるエネルギーフィルタリング
Ishiguro N.; Suzuki T.; Minoda H.; Tanishiro Y.; Yagi K.
Meeting abstracts of the Physical Society of Japan, 10 Mar. 2000, 55(1):787 - 787

22aT-11 反射電子顕微鏡法におけるEnergy filtered holography
Suzuki T.; Ishiguro N.; Minoda H.; Tanishiro Y.; Yagi K.
Meeting abstracts of the Physical Society of Japan, 10 Mar. 2000, 55(1):747 - 747

27a-PS-16 Si微斜面の熱平衡形状への移行の初期過程のREM観察II
SUZUKI T.; MINODA H.; TANISHIRO Y.; YAGI K.
Meeting abstracts of the Physical Society of Japan, 05 Sep. 1998, 53(2):384 - 384

31a-PS-13 Si微斜面と高指数表面のREM観察
SUZUKI T.; MINODA H.; TANISHIRO Y.; YAGI K.
Meeting abstracts of the Physical Society of Japan, 10 Mar. 1998, 53(1):306 - 306

7a-PS-24 Si基板上に成長させたSi粒子の形状のSEM観察
Suzuki T.; Minoda H.; Tanishiro Y.; Yagi K.
Meeting abstracts of the Physical Society of Japan, 16 Sep. 1997, 52(2):361 - 361

31a-T-7 Au吸着Si表面におけるファセット形成のREM法による研究
Aoki K; Suzuki T; Minoda H; Tanishiro Y; Yagi K
Meeting abstracts of the Physical Society of Japan, 17 Mar. 1997, 52(1):363 - 363

29a-PS-25 Si(113)表面のTED観察III
Suzuki T; Minoda H; Tanishiro Y; Yagi K
Meeting abstracts of the Physical Society of Japan, 17 Mar. 1997, 52(1):337 - 337

Si(113)表面のTEM-TED観察II
Suzuki T.; Minoda H.; Tanishiro Y.; Yagi K.
Abstracts of the meeting of the Physical Society of Japan. Sectional meeting, 13 Sep. 1996, 1996(2):531 - 531

3a-J-7 Si高指数表面のTEM-TED観察
Suzuki T; Minoda H; Tanishiro Y; Yagi K
Abstracts of the meeting of the Physical Society of Japan. Annual meeting, 15 Mar. 1996, 51(2):538 - 538

28p-PSB-24 Si微斜面のステップ構造のREM観察
Suzuki T; Minoda H; Tanishiro Y; Yagi K
Abstracts of the meeting of the Physical Society of Japan. Annual meeting, 16 Mar. 1995, 50(2):512 - 512

28p-PSB-22 Si(5 5 12)面のSTM観察
Suzuki T; Minoda H; Tanishiro Y; Yagi K; Sueyoshi T; Sato T; Iwatsuki T
Abstracts of the meeting of the Physical Society of Japan. Annual meeting, 16 Mar. 1995, 50(2):511 - 511

3a-Q-3 Si(hhm)(m/h=1.4-1.5)面のSTM観察
Suzuki T; Minoda H; Tanishiro Y; Yagi K; Kitada H; Simizu N
Abstracts of the meeting of the Physical Society of Japan. Sectional meeting, 16 Aug. 1994, 1994(2):393 - 393

2p-PSA-31 Si円筒穴表面のREM観察IV
Suzuki T; Tanishiro Y; Minoda H; Yagi K
Abstracts of the meeting of the Physical Society of Japan. Sectional meeting, 16 Aug. 1994, 1994(2):381 - 381

29p-PBS-3 Si円筒穴表面のREM観察
Suzuki T.; Tanishiro Y.; Minoda H.; Suzuki M.; Yagi K.
Abstracts of the meeting of the Physical Society of Japan. Annual meeting, 16 Mar. 1993, 48(2):425 - 425

表面物性工学ハンドブック第２版 第14章、3.3節「微傾斜面におけるステップ配列」
鈴木孝将; 編集者; 小間篤; 青野正和; 石橋幸治; 塚田捷; 常行真司; 長谷川修司; 八木克道; 吉信淳, Joint work, 588-590
丸善, Feb. 2007

ミクロの世界・物質編 目で観る物性論
鈴木孝将; 八木克道; 編集者; 社; 日本電子顕微鏡学会, Joint work, 260-261
学際企画, Mar. 1998

The Physical Society of Japan

The Japan Society of Vacuum and Surface Science

表面超伝導体上の2次元金属有機構造体によって誘起された表面構造相転移の研究
領域別研究部, 2次元金属有機構造体研究チーム
01 Apr. 2018 - 31 Mar. 2021

個々の有機分子を自己組織的に配列させた超高密度記録媒体
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01 Apr. 2015 - 31 Mar. 2018

個々の有機分子を自己組織的に配列させた超高密度記録媒体の試作
日本学術振興会, 科学研究費, 基盤研究C
01 Apr. 2015 - 31 Mar. 2018

オージェ電子分光機能付き低速電子線回析装置一式
私立大学等研究設備整備費補助金
01 Apr. 2016 - 31 Mar. 2017

Fabrication of plasmonic metal nano-structures for photocurrent generation drawing an innovation for design of thin-film solar cells
日本学術振興会, 科学研究費, 基盤研究C
01 Apr. 2013 - 31 Mar. 2016

Si表面上のペンタセン分子の薄膜成長過程と電気伝導特性に関する研究
領域別研究部, ナノエレクトロニクス研究チーム
01 Apr. 2012 - 31 Mar. 2015

金属及び半導体上に形成する同一性酸化シリコン単分子層の構造とバンドギャップ
日本学術振興会, 科学研究費, 基盤研究C
01 Apr. 2012 - 31 Mar. 2014

Graphene膜上の多環芳香族分子の化学吸着構造と電気伝導特性に関する研究
大学院教育研究高度化推進経費
01 Apr. 2011 - 31 Mar. 2012

半導体表面上の多環芳香族分子の化学吸着構造と電気伝導特性に関する研究
松籟科学技術振興財団
Dec. 2010 - Dec. 2011

超高真空ホログラフィー電子顕微鏡によるSi高指数表面の研究
日本学術振興会, 日本学術振興会特別研究員奨励費, PD
01 Apr. 1998 - 31 Mar. 2000

微斜面及び高指数Si表面のREM-RHEED、STM-STS法による研究
日本学術振興会, 日本学術振興会特別研究員奨励費, DC1
01 Apr. 1995 - 31 Mar. 1998